JANTX2N5660

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The JANTX2N5660 series is a family of popular microwave silicon N-Channel Enhancement Mode field effect transistors. The transistors are designed to provide excellent gain and power performance for any microwave application. They feature a very wide frequency range of up to 20 GHz and a maximum drain-source current of up to 6 A. The transistors are available in both single package and dual package configurations.

The JANTX2N5660 is a single-stage N-channel Field Effect Transistor (FET) designed for use as a high-frequency power amplifier, switch, and/or mixer in wireless LAN applications. The JANTX2N5660 FET utilizes a Pseudo-Symmetrical (PS) process technology, which offers high input and output impedance along with high gain and power performance. The JANTX2N5660 FET is available in a variety of packages, including a Quad Flat No Lead (QFN) surface-mount package that is ideal for space-constrained microwave applications.

The JANTX2N5660 series transistors are extremely useful and versatile devices that are used in a wide range of microwave applications. These applications include WLAN and cellular/PCS base station infrastructure, WiMAX, GPS, satellite communications, automotive and microwave radio systems, and more. The JANTX2N5660 transistors are also suitable for use in Class-D, or Class-F amplifiers, switches, and mixers.

The working principle of the JANTX2N5660 series transistors is based on the flow of electricity through the gate of the FET when a voltage is applied to it. When a voltage is applied to the gate of the FET, it creates a conductive path for the electrons to travel through. This flow of electrons allows the transistor to turn on and off according to the input signal. The higher the gate voltage, the lower the drain current, and vice versa.

JANTX2N5660 transistors offer excellent performance and reliability in a variety of different applications. They are able to provide high power, low noise, and wide frequency response. Additionally, they have a very high peak output power and a low RON, making them ideal for high frequency operation. The FET is also cost effective and offers an excellent thermal performance.

The JANTX2N5660 series transistors are available in a variety of packages, including SOT-223, TO-252, TO-251, and QFN, making them a great choice for any type of application. They are also RoHS compliant and are designed to meet MIL-STD-202G and IEC 60950-1 standards. The FETs also have a very low power consumption, which makes them an ideal choice for energy efficient designs.

In summary, the JANTX2N5660 series FETs are popular transistors designed for use in a variety of different applications. They offer excellent gain and power performance, and are available in both single package and dual package configurations. The transistors are cost effective and feature a very high peak output power and low RON, making them ideal for high frequency operations. The FETs are RoHS compliant and have a very low power consumption, making them an ideal choice for energy efficient designs.

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