Allicdata Part #: | JANTX2N6790U-ND |
Manufacturer Part#: |
JANTX2N6790U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 18-LCC |
More Detail: | N-Channel 200V 2.8A (Tc) 800mW (Tc) Surface Mount ... |
DataSheet: | JANTX2N6790U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 18-CLCC |
Supplier Device Package: | 18-ULCC (9.14x7.49) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 800mW (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14.3nC @ 10V |
Series: | Military, MIL-PRF-19500/555 |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The JANTX2N6790U is a high-voltage MOSFET transistor device. It is an N-channel transistor, meaning that current flow is through the transistor\'s source terminal when the gate is held at a negative voltage, and current is cut off when the gate voltage is tied to the ground. It is an enhancement-type MOSFET, so it requires a positive gate voltage to be able to turn on the device.
This device is designed for exceptional performance in high voltage applications, such as automotive ignition systems, RF power amplifiers, switching converters and amplified video applications. It is also suitable for use in high speed logic circuits, due to its fast switching speed.
The JANTX2N6790U has a maximum drain-source voltage of 200V, which makes it well suited for high voltage applications. It also has a drain-source breakdown voltage of 150V which allows the device to handle higher voltages with very little degradation in performance. The device is equipped with a maximum continuous drain current of 4 amps, meaning it can handle large amounts of current without becoming damaged. The on-resistance is extremely low, ensuring very little power dissipation, while the maximum gate-source capacitance is just 5 pF, giving the device very fast switching times.
The working principle of the JANTX2N6790U is based on the two-dimensional vacuum electron behavior of a metal-oxide semiconductor (MOS) transistor. In a MOS transistor, a thin oxide layer is placed on the silicon surface which acts as a gate dielectric. When a voltage is applied to the gate, it creates an electric field which disturbs the electrons near the oxide-silicon interface, causing conduction to occur. This allows current flow from the source to the drain terminals when the gate voltage is at the correct level.
The JANTX2N6790U is well suited for use in a wide range of high voltage applications. Its low on-resistance and high-voltage rating make it perfect for powering large loads in automotive applications, while its fast switching speeds make it ideal for logic circuits. Its low power dissipation combined with its large continuous drain current means that it also makes an excellent choice for power amplifiers and switching converters.
The specific data is subject to PDF, and the above content is for reference
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