Allicdata Part #: | JANTX2N6798-ND |
Manufacturer Part#: |
JANTX2N6798 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 200V 5.5A (Tc) 800mW (Ta), 25W (Tc) Thro... |
DataSheet: | JANTX2N6798 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-205AF Metal Can |
Supplier Device Package: | TO-205AF (TO-39) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 800mW (Ta), 25W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42.07nC @ 10V |
Series: | Military, MIL-PRF-19500/557 |
Rds On (Max) @ Id, Vgs: | 420 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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JANTX2N6798 is a field-effect transistor (FET), also known as a MOSFET, and is a single-charge device used in a variety of applications. It gains its high-performance characteristics due to its particular construction, which makes it suitable for use in a range of applications.
The construction of JANTX2N6798 has three main components: the gate, source, and drain. It is approximately 130 by 130 microns in size, and it has a built-in body diode. The gate is the terminal that controls the conductivity of the FET, and the source and drain are the terminals that provide input and output paths for current. When voltage is applied to the gate, the charge carriers are repelled from the semiconductor surface and the FET is switched on. This is known as the FET’s working principle.
JANTX2N6798 is a very reliable device due to its high switching speed and low gate capacitance, making it suitable for high frequency applications. It is also very power efficient because it can achieve high current gains with a low voltage operation. The device is also easily adaptable to a variety of settings, making it a popular choice for many applications.
JANTX2N6798 can be used in a range of applications, and it is commonly used in power management, automation, communication, and other electronic systems. It is often used as a pass device in switching power supplies and as an amplifier in audio and RF circuits. In addition, it can also be used for voltage clamping, voltage multiplication, and switching in digital circuits. It is also capable of handling high frequency signals, making it suitable for use in digital radio communications.
JANTX2N6798 devices are highly reliable and are often used in harsh environments and higher voltage applications. The device operates over a wide temperature range from -55°C to 150°C, and it also has a high static drain-to-source breakdown voltage. For these reasons, the device is suitable for the demanding operating conditions of industrial and automotive applications.
In conclusion, JANTX2N6798 is a reliable single-charge field-effect transistor that is suitable for a range of applications. It is highly reliable and can handle high frequency signals. Its versatility makes it suitable for use in power management, automation, communication, and other electronic systems. Its high switching speed, low gate capacitance, and power efficiency make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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