JANTX2N918UB

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Developed by Motorola, JANTX2N918UB is a single bipolar junction transistor (BJT) device designed for general purpose amplifying applications. Majority of JANTX2N918UB transistors have a maximum collector-emitter voltage of 40V, with a maximum of 60V for collector-base voltage, and 80V for emitter-base voltage (collector-emitter voltage of 40V in case of reverse bias). This device is specifically created to amplify, switch, and provide current gain and preferences in all types of electronic circuits.

A bipolar junction transistor has three terminals—base, collector, and emitter—where each of them plays a distinct role. Even though there are several technologies available for BJTs, NPN BJTs are primarily manufactured out of semiconductor materials, such as silicon or germanium. The key characteristics of an NPN bipolar junction transistor are the following:

• An N-type material is sandwiched between two P-type materials.
• There are two types of charge carriers—also known as the majority and minority carriers—in the BJT.
• The movement of the electrons from the emitter to the collector requires an electric current that is applied to the base.

When it comes to the underlying operation of an NPN transistor, the prime principle is to control the current flow between the emitter and collector with the voltage applied to the base. This enables the JANTX2N918UB to provide gain, current gain, and other preferences while amplifying signal. The basic working of the JANTX2N918UB can be defined through the following steps:

• Electrons flow from the emitter to the collector only when the voltage applied to the base is greater than the minimum threshold. This is known as the forward-bias condition.
• The hole collector current is always greater than the hole emitter current, which implies that the collector current is significantly larger than the base current.
• Under a forward-bias condition, the collector current is radically greater than the base current. This is known as current gain and is calculated by dividing the collector current by the base current.
• The JANTX2N918UB can also be used as a switch. By applying a small current to the base layer, the transistor can be turned on, allowing the current to flow from the emitter to the collector layer.

In this way, the JANTX2N918UB proves to be a versatile device that has a wide range of applications, including amplifier circuits, switching circuits, and as a current amplifier. This device can also be used in common-emitter configurations, where the output voltage is phase-inverted from the input voltage across the transistor. In addition, it can be used in Darlington pairs to provide high current gain, while the common-collector configurations are ideal for the implementation of current sources. The JANTX2N918UB can also be used as a logic switch, where a higher input voltage produces output logic “high,” while a smaller voltage produces logic “low.”

Overall, JANTX2N918UB is an ideal transistor device for general purpose amplifying applications, current amplification, Darlington pairs, and many more. The wide gamut of operational modes of this device makes it immensely popular among the electronics industry. The device has a maximum collector-emitter voltage of 40V, with a maximum of 60V for collector-base voltage, and 80V for emitter-base voltage (collector-emitter voltage of 40V in case of reverse bias). Its easy availability in the market, coupled with a higher current gain, low-cost production, and high-frequency operations make it an obvious choice for many amplifying applications.

The specific data is subject to PDF, and the above content is for reference