Allicdata Part #: | JANTXV1N4474USS-ND |
Manufacturer Part#: |
JANTXV1N4474US |
Price: | $ 9.58 |
Product Category: | Uncategorized |
Manufacturer: | Semtech Corporation |
Short Description: | 24V ZENER 1.5W |
More Detail: | N/A |
DataSheet: | JANTXV1N4474US Datasheet/PDF |
Quantity: | 1000 |
150 +: | $ 8.71521 |
Series: | * |
Part Status: | Active |
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The JANTXV1N4474US is a high voltage fast-switching NPN power transistor designed and configured for use in a wide range of automotive and industrial applications. The device is well suited for high voltage bridge amplifiers and fast switching power MOSFETS, as well as for high speed analog circuits, motor drivers and other general purpose power transistors. It features a low thermal resistance, a high breakdown voltage and a wide temperature range.
The JANTXV1N4474US is made from a silicon-on-insulator technology, allowing it to operate at up to 200V, making it the ideal choice for automotive and industrial applications where high voltage and fast switching are needed. The device features an NPN configuration, which offers excellent power handling capabilities and excellent high frequency performance. It also has a low thermal impedance, allowing it to dissipate heat quickly and efficiently.
The basic operating principle of the JANTXV1N4474US is simple and straightforward. When a voltage is applied across its drain and source electrodes, a current will flow through the device. This current is determined by the resistance of the device and its gate voltage. The voltage being applied to the gate will determine the current that can flow through the device, allowing it to be used as an amplifier, switch, or any other necessary purpose.
The JANTXV1N4474US can be used in a number of automotive and industrial applications, such as motor drivers, bridge amplifiers, MOSFET drivers, and high speed analog circuits. It is also commonly used in audio amplifiers and other power transistors. Its high breakdown voltage ensures that it can handle a high current, meaning it is very well suited to any automotive or industrial environment.
The JANTXV1N4474US is an excellent device for a wide range of automotive and industrial applications. Its low thermal resistance and high breakdown voltage make it the ideal choice for high power switching and providing fast switching power MOSFETs. Its NPN configuration ensures high frequency performance and excellent power handling capabilities. Thanks to its wide temperature range and wide range of applications, the JANTXV1N4474US is a very versatile power transistor.
The specific data is subject to PDF, and the above content is for reference
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JANTX1N6104 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.71V AXI... |
JANTX1N6104A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V AXIA... |
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JANTX1N6105 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V AXI... |
JANTX1N6105AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 13.4V B SQ... |
JANTX1N6105US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V B S... |
JANTX1N6106 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 15.23V AXI... |
JANTX1N6106AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 14.5V B SQ... |
JANTX1N6107 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V AXI... |
JANTX1N6107A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V AXIA... |
JANTX1N6107AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V B SQ... |
JANTX1N6107US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V B S... |
JANTX1N6108 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V AXI... |
JANTX1N6108A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V AXIA... |
JANTX1N6108AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V B SQ... |
JANTX1N6108US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V B S... |
JANTX1N6109 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 19.11V AXI... |
JANTX1N6109A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 18.2V AXIA... |
JANTX1N6110 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V AX... |
JANTX1N6110US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V B ... |
JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
JANTX1N6111US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V B ... |
JANTX1N6112 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V AX... |
JANTX1N6112AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 25.1V B S... |
JANTX1N6112US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V B ... |
JANTX1N6113 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 29.09V AX... |
JANTX1N6113A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V AXI... |
JANTX1N6114 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V AX... |
JANTX1N6114US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V B ... |
JANTX1N6115 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V AX... |
JANTX1N6115A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V AXI... |
JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
JANTX1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
JANTX1N6116AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 37.4V B S... |
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