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Introduction

The JANTXV1N4477 is a single Zener diode voltage regulator. It is a high performance surface mount device with a 3.2 to 3.6 V breakdown voltage. It provides excellent stability with a wide operating temperature range from -55°C to 125°C. It can be used in a variety of applications including constant voltage sources, voltage reference circuits, and local on-card regulation.

Features

The JANTXV1N4477 is a single Zener diode voltage regulator. It is a high performance surface mount device with a 3.2 to 3.6 V breakdown voltage. Its features include:

• Low power dissipation
• High reverse surge capability
• Low dynamic impedance
• High stability over temperature and reverse bias variation
• Low forward voltage drop

Applications

• Voltage clamping
• Low voltage bypass and protection
• Voltage multiplying
• Offset voltages for electrically sensitive devices, such as microcontrollers
• Voltage regulators
• Voltage references
• Low power logic circuit protection
• Power supply decoupling
• Functional block switching

Working principle

The JANTXV1N4477 is a single Zener diode voltage regulator. It works through the avalanche breakdown effect of a diode. When a diode is reverse biased, with the applied voltage exceeding the breakdown voltage of the diode, electrons are accelerated due to the high electric field, resulting in collisions of sufficient energy to create additional electrons and create a conductive path through the diode. This allows current to flow in the ‘reverse’ direction, and the voltage across the diode is maintained at a fixed value.

This breakdown voltage is determined by the doping profile of the diode and can be controlled by adjusting this profile. The JANTXV1N4477 is designed to have a breakdown voltage in the range of 3.2 to 3.6 V.

Conclusion

The JANTXV1N4477 is a high performance single Zener diode voltage regulator. It can be used in a variety of applications including constant voltage sources, voltage reference circuits, and local on-card regulation. Its features include low power dissipation, high reverse surge capability, low dynamic impedance, high stability over temperature and reverse bias variation, and low forward voltage drop. It is designed to have a breakdown voltage in the range of 3.2 to 3.6 V.

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