JANTXV1N4615CUR-1

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Diodes are the heart of any circuit. They provide the optimal method of converting electric current pulses into potential and potential changes into electrical pulses. Zener diodes, in particular, are used to regulate a flow of electricity, also known as the load current, in an electronic device. This regulation is typically done by providing a heavily doped p-n junction barrier between two oppositely charged semiconductor materials, resulting in an adjustable voltage drop across the device. JANTXV1N4615CUR-1 is a type of zener diode which is mainly suited for voltage regulation purposes, in a wide range of application fields.

The JANTXV1N4615CUR-1 is a small, ultra-narrow width, hermetically sealed silicon zener diode with a power dissipation of 1.50 watts. It has a 6.150 Volt nominal zener voltage and a 0.800 to 0.500 microamperes zener reverse current. The zener diode has a low profile of 0.075” (1.90mm) over the hermetic case and encapsulation. It has an average current handling capacity of 3.1A.

JANTXV1N4615CUR-1 is specifically designed for voltage regulation of large and small scale telecom systems. This makes the device ideal for military designs, telecommunications, radio-frequency (RF) systems, and optical receivers. In addition, the tight breakdown voltage tolerance and temperature coefficient of this device make them well suited for audio, power-supply, and high-voltage applications. It also finds application in low-voltage light batteries (e.g. AAA, AA) and uninterruptible power supply systems. Moreover, as the part is available in a small package size, it is also used for portable devices and embedded systems.

The working principle of the JANTXV1N4615CUR-1 is the same as that of the conventional zener diode. In its reverse-biased state, the device behaves as any other diode and blocks current from flowing from the positive to the negative side. However, when the reverse bias voltage applied across it is higher than its breakdown voltage, current starts flowing in the reverse direction. This is due to the avalanche effect, which is the process of electrons being accelerated in the reverse-biased diode junction, in such a way that they break the depletion zone barrier and generate electron-hole pairs and current.

In summary, the JANTXV1N4615CUR-1 is an efficient zener diode specifically designed for voltage regulation purposes, in various application fields ranging from telecom systems to embedded systems. Its main working principle is based on the reverse-biased operation of the device. The highly optimized design of the device allows for a low voltage drop and a wide range of current handling capacity, allowing for a reliable and cost-effective performance.

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