Allicdata Part #: | JANTXV1N4962US.TR-ND |
Manufacturer Part#: |
JANTXV1N4962US.TR |
Price: | $ 10.16 |
Product Category: | Uncategorized |
Manufacturer: | Semtech Corporation |
Short Description: | 15V ZENER 500W |
More Detail: | N/A |
DataSheet: | JANTXV1N4962US.TR Datasheet/PDF |
Quantity: | 1000 |
150 +: | $ 9.23258 |
Series: | * |
Part Status: | Active |
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The JANTXV1N4962US.TR is a field effect transistor (FET) that is available in TO-263AB package form. This particular FET is classified as a N–Channel enhancement mode depletion FET. The JANTXV1N4962US.TR is comprised of two elements, namely the transistor itself and its gate. The purpose of the gate is to control the flow of electrons within the device, and its susceptibility to external signals. The JANTXV1N4962US.TR offers great performance and has high-speed switching capabilities, making it an ideal choice for applications such as inverters, for switching and for variable gain amplifiers.
The JANTXV1N4962US.TR is typically used in applications that require a low-impedance connection between the source and drain of the FET and the power supply. This is typically done by connecting the drain directly to the ground side of the power supply and the source directly to the positive side of the power supply. This opens up a wide range of possibilities for the FET, including application areas as wide-ranging as automotive, communications equipment, consumer electronics, medical equipment, and more.
The JANTXV1N4962US.TR works on the principle of field effect. In this case, the transistor uses the voltage applied to its gate to control or modulate the current flowing between its source and drain. This voltage, known as the gate voltage, is applied to the gate of the FET and, in turn, affects the shape of the channel between the source and drain. When the channel is closed, no current flows across the device, and thus the FET acts as a “switch” with the gate voltage controlling the “open” or “close” state. As the gate voltage changes, the shape of the channel changes, and the FET acts as an amplifier, modulating the current flowing between the source and drain in accordance with the magnitude of the divided gate voltage.
The JANTXV1N4962US.TR can be used in a variety of applications, but is mainly utilized in inverters, switching, and variable gain amplifiers. The low-impedance connection between the source and drain, combined with the speed of the FET switching, make it an ideal choice for inverter designs, while the modulated current capabilities are best suited for variable gain amplifiers, where the output current can be made to vary in accordance with the modulation of the source voltage. It is also used in automotive applications and as a low-power switching device, allowing for the low power usage when controlling lower current devices.
In conclusion, the JANTXV1N4962US.TR is a field effect transistor noteworthy for its speed, reliability and low impedance connection between its gate and the power supply. Its applications range from inverters and switching to variable gain amplifiers, as well as automotive and medical equipment. Its principal area of operation lies in the modulation of the gate voltage and the control of current flowing between the source and drain. This is a result of the field effect principle upon which the FET operates.
The specific data is subject to PDF, and the above content is for reference
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JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
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DIODE GENERAL PURPOSE TO220
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