| Allicdata Part #: | JANTXV1N4966USS-ND |
| Manufacturer Part#: |
JANTXV1N4966US |
| Price: | $ 10.00 |
| Product Category: | Uncategorized |
| Manufacturer: | Semtech Corporation |
| Short Description: | 22V ZENER 500W |
| More Detail: | N/A |
| DataSheet: |  JANTXV1N4966US Datasheet/PDF |
| Quantity: | 1000 |
| 150 +: | $ 9.09762 |
Specifications
| Series: | * |
| Part Status: | Active |
Description
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JANTXV1N4966US is a semiconductor device. It is a high-performance, medium-speed, RF silicon bipolar transistor. This transistor is designed for high DC current gain, excellent power dissipation and reliability. Its major applications include RF (radio frequency) amplifiers, local oscillators, receivers, transmitters, and communication drivers. This component is used for many electronic applications, such as consumer electronics, automotive, medical, and industrial. It is also used in communication systems, mobile phones, radio transmitters and receivers, and durable goods.IThis part is suitable for use in low power amplifier stages, and its small size and light weight make it an attractive choice for use in portable devices as well. JANTXV1N4966US supports frequencies up to 28 MHz and very low noise figure. This part is an excellent choice for use in voltage controlled oscillators and frequency synthesizers. In order to properly utilize this part, the user needs to understand its working principle. This device operates at a DC supply voltage, and is connected to the load via a bias circuit. This part is a three-terminal device, and so the applied voltage must be connected between the collector and emitter terminals. The current flow through this device is determined by the DC bias voltage that is applied between the base and emitter terminals. The current flow will then be a constant value when the bias voltage is kept constant. The transistors characteristics, such as current gain, gain-bandwidth product, power dissipation, etc., depend on the amount of current flowing through it. The collector current will be determined by the resistive load connected across the collector and emitter, and the current gain of the device is determined by the ratio of the collector current to the base current. The power dissipation of the device is the product of the DC voltage and the collector current. When this device is used in an RF amplifier, the operating region should be clearly determined according to the signal\'s purpose, phase, frequency, etc. In a broadband amplifier, the operating voltage, frequency, and current gain need to be regulated, in order to reduce distortion and noise.Generally speaking, JANTXV1N4966US transistors serve as a static switch, because of their high current gain and wide range of DC operating points. This device can be used in a variety of applications, especially in RF power amplifiers, high-speed logic circuits, and voltage controlled oscillators. The JANTXV1N4966US has an excellent price-performance ratio, and thus, it is a very popular choice among the electronic component industry.
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