Allicdata Part #: | JANTXV1N4972USS-ND |
Manufacturer Part#: |
JANTXV1N4972US |
Price: | $ 10.04 |
Product Category: | Uncategorized |
Manufacturer: | Semtech Corporation |
Short Description: | 39V ZENER 500W |
More Detail: | N/A |
DataSheet: | JANTXV1N4972US Datasheet/PDF |
Quantity: | 1000 |
150 +: | $ 9.12009 |
Series: | * |
Part Status: | Active |
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The JANTXV1N4972US is a transistor utilized mainly in aerospace applications due to its extremely low thermal resistance and solid construction. This device has great application potentials and is suitable to a variety of environments. In this article, we discuss the application field and working principle of the JANTXV1N4972US.
The JANTXV1N4972US is a high-performance NPN transistor intended for high speed switching applications. It features excellent thermal resistance and low distortion, making it suitable for applications where power dissipation must be kept to a minimum. The device is also suitable for use in linear power contracts that require minimum harmonic distortion and tighter DC bias control. The device can handle up to 100 volts and up to 5Amp. of current, making it capable of powering a wide range of circuits.
The most common use of the JANTXV1N4972US is in Aerospace applications. It is ideal for flight control systems, autopilot systems, onboard navigation systems and missile guidance systems requiring very reliable electronic components. The device is also suitable for use in automotive applications such as in car audio or power seat adjustment. As well, it can be used in industrial applications like remote heater control, circuit switching, and other specialized switching applications.
The JANTXV1N4972US is based on the fundamental operation rules of PNP and NPN transistors. It is a transistor consisting of three regions, the collector, base, and emitter. The JANTXV1N4972US has two transistors for the collector and one for the base and emitter. The base and the emitter combine together to act as one transistor and their function is to control the current flow between the base and emitter. The collector region allows the current to flow from the emitter to the collector and is used to amplify current flow based on the input signal.
The basic operational principle of the JANTXV1N4972US is to control the current flow between the base and emitter region. When the base-emitter current is increased, the collector current also increases. When the base-emitter current is decreased, the collector current also decreases. As such, the JANTXV1N4972US is able to amplify signals so that a small input current can cause a sizeable change in the collector current. In doing so, it is able to control the switching of large pieces of equipment or controls housed in the device.
In sum, the JANTXV1N4972US is an efficient transistor designed with a wide range of applications in mind. It offers an ideal solution for aerospace applications that require high reliability and low power dissipation. The device works by amplifying the input current and controlling the current flow between the base and the emitter. To conclude, the JANTXV1N4972US is a versatile transistor that provides efficient operation for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
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JANTX1N6115A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V AXI... |
JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
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JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
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