Allicdata Part #: | JANTXV1N4985USS-ND |
Manufacturer Part#: |
JANTXV1N4985US |
Price: | $ 10.05 |
Product Category: | Uncategorized |
Manufacturer: | Semtech Corporation |
Short Description: | 130V ZENER 500W |
More Detail: | N/A |
DataSheet: | JANTXV1N4985US Datasheet/PDF |
Quantity: | 1000 |
150 +: | $ 9.14263 |
Series: | * |
Part Status: | Active |
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JANTXV1N4985US is an electronic component which can be used for a variety of applications. It is a three terminal depletion mode MOSFET transistor that is designed for operation over a wide voltage range, and is ideal for applications requiring high power ratings and high gain. The device has a low on-resistance which makes it suitable for switching and linear applications, as well as for audio and RF applications.
The working principle of the JANTXV1N4985US is based on the same principle as all other transistors, employing a consolidation of the three unique terminals, the source, the gate and the drain. Each of these terminals allows for an emitter, collector, or base connection, allowing for a variety of circuit connections. The JANTXV1N4985US features one of the lowest on resistance ratings in a three-terminal MOSFET transistor to date, making it an ideal choice for applications that require high current rating, high gain, and low on-resistance.
One common application of the JANTXV1N4985US is in the design and construction of audio-frequency amplifiers. These amplifiers are used to amplify low-level signals, increasing the power to drive headphones or speakers. The transistor\'s low on-resistance allows for high gain over a wide bandwidth, allowing for greater audio fidelity. It is also used in RF applications such as RF switches, receivers, and transmitters. This is due to the transistor\'s fast switching speed and low on-resistance, making it suitable for both linear and switching RF applications.
The JANTXV1N4985US is also commonly used in power management applications. The low on-resistance and class B operating characteristics make it an ideal choice for DC-DC converters. It is used to provide stable low current, allowing for efficient power control. In addition, the device\'s fast switching speed makes it suitable for motor control applications. By modulating the voltage applied to the transistor, the speed of the motor can be precisely controlled.
The JANTXV1N4985US is also used in linear applications such as voltage comparison circuits. In these circuits, the transistor is used as the comparator, comparing two input voltages and switching the output accordingly. The device\'s high gain, linearity, low voltage headroom, and low power dissipation make it suitable for these types of applications. It is also widely used in interface circuits and output stages, due to its low input capacitance and low output impedance.
In conclusion, the JANTXV1N4985US is a versatile three terminal depletion mode MOSFET transistor. It has a low on-resistance which makes it suitable for applications requiring high power ratings and high gain. Its fast switching speed and low on-resistance make it ideal for audio applications, such as amplifiers and RF applications, including RF switches, receivers, and transmitters. In addition, its low voltage headroom and low power dissipation make it suitable for power management and motor control applications. Lastly, its low input capacitance and low output impedance make it an ideal choice for linear and interface circuitry.
The specific data is subject to PDF, and the above content is for reference
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JANTX1N6109A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 18.2V AXIA... |
JANTX1N6110 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V AX... |
JANTX1N6110US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V B ... |
JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
JANTX1N6111US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V B ... |
JANTX1N6112 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V AX... |
JANTX1N6112AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 25.1V B S... |
JANTX1N6112US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V B ... |
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JANTX1N6114 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V AX... |
JANTX1N6114US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V B ... |
JANTX1N6115 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V AX... |
JANTX1N6115A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V AXI... |
JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
JANTX1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
JANTX1N6116AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 37.4V B S... |
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