Allicdata Part #: | 1086-2809-ND |
Manufacturer Part#: |
JANTXV1N5416US |
Price: | $ 12.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 100V 3A D5B |
More Detail: | Diode Standard 100V 3A Surface Mount D-5B |
DataSheet: | JANTXV1N5416US Datasheet/PDF |
Quantity: | 1000 |
109 +: | $ 10.83850 |
Series: | Military, MIL-PRF-19500/411 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 9A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 1µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, B |
Supplier Device Package: | D-5B |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The JANTXV1N5416US is a single, ultrafast, surface mount, axial lead rectifier. It is suitable for a wide range of applications such as lighting and power supplies, display systems, automotive, and consumer electronics. This device features a two-stage PN junction with a very low terminal capacitance that allows for high data transfer speeds and better EMI radiation performance.
The working principle of the JANTXV1N5416US rectifier is one of the most common characteristics of diodes in general. The operation of a single rectifier is based on the forward-biasing of a p-n junction, wherein an electric potential is applied in such a manner that the electrons from the n-side and holes from the p-side start to flow towards each other forming electrons-holes pairs at the junction. This process induces a current in the device in the forward-bias direction.
However, upon application of a reverse bias, the p-n junction is reversed, preventing the electrons-holes formation. This prevents the current flow, achieving a reverse blocking state. This reverse blocking state, in which the rectifier acts as an isolator between the two sides of the diode, is the main characteristic of a single rectifier.
The JANTXV1N5416US is also a low-barrier single rectifier. It is suitable for applications that utilize very high switching frequencies and light loading conditions, such as consumer electronics and LED displays. This type of single rectifier offers an improved performance under such conditions due to its very low forward voltage drop and low reverse current leakage.
In addition, the JANTXV1N5416US has a significantly low reverse recovery time that is suitable for pulse-width modulated power supplies. This capability of ultrafast switching, along with its low-barrier operation and high forward voltage, makes this diode suitable for a range of high-speed applications.
The JANTXV1N5416US is designed for a wide range of operating temperatures, such as -65°C to +125°C. This makes it suitable for a variety of extreme environments and ensures reliable operation. In addition, this device offers excellent reliability and long-term stability, allowing for a cost-effective solution.
The JANTXV1N5416US is an ideal solution for a wide range of applications such as consumer electronics, automotive, portable devices, lighting, and display systems. Its low capacitance, high switching speeds, low forward voltage, and high reliability make it a popular choice for designers.
The specific data is subject to PDF, and the above content is for reference
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