Allicdata Part #: | 1086-2818-ND |
Manufacturer Part#: |
JANTXV1N5550US |
Price: | $ 13.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 200V 5A D5B |
More Detail: | Diode Standard 200V 5A Surface Mount D-5B |
DataSheet: | JANTXV1N5550US Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 11.94580 |
Series: | Military, MIL-PRF-19500/420 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 9A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 1µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, B |
Supplier Device Package: | D-5B |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes - Rectifiers - Single
The JANTXV1N5550US is a single diode that is utilised for the purpose of power rectifiers. This component is capable of achieving a maximum blocking voltage of 500 volts and a current equivalent to 1.5 amperes. It is a component made to withstand high temperatures, with a thermal rating of 175°C/W. The JANTXV1N5550US\' temperature and current ratings indicate that it is particularly useful when used to provide efficient and reliable energy in a variety of applications. The component is also applicable in applications that deal with higher levels of power, such as in computers or as a rectifier for AC mains, in addition to providing rectification for low-level power levels.The JANTXV1N5550US\' working principle is based on the basic functioning of a conventional diode. It is made up of two electrodes passing through the centre of a current carrying material – the p-n junction. To explain it simply, the junction consists of a p-type semiconductor material that is formed when a element with a three-valent atom is added to the n-type semiconductor material. This junction is responsible for allowing an electric current to pass through the diode, and consequently rectifying it.
When power is supplied, the p-side of the junction begins to move electrons, while the n-side of the junction starts to draw them in. This combination of negative and positive movement creates rectification, and has been used for a range of applications, from providing high-power to low-level power level items. Different configurations of the p-n junction can be used to further refine the rectification process for specific applications.
The JANTXV1N5550US is intended for applications where high voltage is necessary, such as switching DC power supplies, electromechanical loads, etc. The component is encapsulated in an epoxy shell with a flame-retardant insulation, which is perfect for operating in high-temperature areas as well. Additionally, the diode is designed to provide continuous operation without any problems.
The JANTXV1N5550US\' working principle and fields of application makes it the perfect choice for rectification in a variety of scenarios. Its thermal rating of 175°C/W ensures that it performs well in high-temperature environments, while its 1.5 amperes rating guarantees stability and reliability. Its p-n junction configuration is ideal for efficient rectification of power, while its epoxy casing ensures safety and durability. The wide range of features and applications of the JANTXV1N5550US make it a versatile and reliable component for all rectification requirements.
The specific data is subject to PDF, and the above content is for reference
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