Allicdata Part #: | JANTXV1N5614S-ND |
Manufacturer Part#: |
JANTXV1N5614 |
Price: | $ 6.22 |
Product Category: | Uncategorized |
Manufacturer: | Semtech Corporation |
Short Description: | D MET 1A STD 200V HRV |
More Detail: | N/A |
DataSheet: | JANTXV1N5614 Datasheet/PDF |
Quantity: | 1000 |
125 +: | $ 5.65382 |
Series: | * |
Part Status: | Active |
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,CSS。JANTXV1N5614 Application Field and Working Principle
The JANTXV1N5614 transistor is a high-performance N-channel Enhancement Mode Field Effect Transistor. It features a small size, low operating current, low gate threshold voltage, high cell density, and wide range on operating temperatures. These features make it suitable for high-temperature, high-frequency, and high-efficiency applications. This article will focus on its application field and working principle.
Application Field
The JANTXV1N5614 transistor is mainly used in various power management applications, such as electronic load switching, fluorescent lighting, and automotive electronics, etc. It can also be used in high-frequency point of load DC-DC converters, and other high-density, power management circuits.
With its small size and low operating current, it is perfect to be used in mobile devices, such as mobile phones, tablets, laptops, and other consumer electronics. The high cell density of this transistor makes it ideal for high-density and high-performance power management circuits. It is also suitable for use in automotive electronics, including LED lighting, power tools, and battery management system.
Working Principle
The JANTXV1N5614 transistor works on the principle of the field effect. It uses an input signal to control the current flowing from a drain to the source terminal. The input signal can be either digital or analog, and it also has the capability to sense the input voltage and provide a bias-by-formation.
The JANTXV1N5614 transistor works by creating a field effect between the drain and source terminals. This field effect modulates the amount of current flowing through the device. When the input is low, the device decreases the current flowing through the device, and when the input is high, it increases the current flowing through the device.
The JANTXV1N5614 transistor has a very low gate threshold voltage. This means that low voltages can be used to control the current flowing through the device. This makes the device excellent for low power applications, and for applications that require high operating frequencies. It is also suitable for use in power management systems, as it can be used to turn on and off certain circuits.
Conclusion
The JANTXV1N5614 transistor is a high-performance N-channel Enhancement Mode Field Effect Transistor. It features a small size, low operating current, low gate threshold voltage, and wide range on operating temperatures, making it perfect for high-frequency, high-efficiency applications. It is primarily used in various power management applications, such as electronic load switching, fluorescent lighting, and automotive electronics. The working principle is based on the field effect, which makes it suitable for low voltages and high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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JANTXV1N6141A | Microsemi Co... | 38.35 $ | 1000 | TVS DIODE 6.9V 13.4V C AX... |
JANTX1N6103A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.2V AXIA... |
JANTX1N6103US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.76V B S... |
JANTX1N6104 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.71V AXI... |
JANTX1N6104A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V AXIA... |
JANTX1N6104AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V B SQ... |
JANTX1N6105 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V AXI... |
JANTX1N6105AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 13.4V B SQ... |
JANTX1N6105US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V B S... |
JANTX1N6106 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 15.23V AXI... |
JANTX1N6106AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 14.5V B SQ... |
JANTX1N6107 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V AXI... |
JANTX1N6107A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V AXIA... |
JANTX1N6107AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V B SQ... |
JANTX1N6107US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V B S... |
JANTX1N6108 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V AXI... |
JANTX1N6108A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V AXIA... |
JANTX1N6108AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V B SQ... |
JANTX1N6108US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V B S... |
JANTX1N6109 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 19.11V AXI... |
JANTX1N6109A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 18.2V AXIA... |
JANTX1N6110 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V AX... |
JANTX1N6110US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V B ... |
JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
JANTX1N6111US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V B ... |
JANTX1N6112 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V AX... |
JANTX1N6112AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 25.1V B S... |
JANTX1N6112US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V B ... |
JANTX1N6113 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 29.09V AX... |
JANTX1N6113A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V AXI... |
JANTX1N6114 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V AX... |
JANTX1N6114US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V B ... |
JANTX1N6115 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V AX... |
JANTX1N6115A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V AXI... |
JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
JANTX1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
JANTX1N6116AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 37.4V B S... |
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