Allicdata Part #: | JANTXV1N6079-ND |
Manufacturer Part#: |
JANTXV1N6079 |
Price: | $ 75.10 |
Product Category: | Uncategorized |
Manufacturer: | Semtech Corporation |
Short Description: | D MET 5A SFST 50V HRV |
More Detail: | N/A |
DataSheet: | JANTXV1N6079 Datasheet/PDF |
Quantity: | 1000 |
125 +: | $ 68.27560 |
Series: | * |
Part Status: | Active |
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The JANTXV1N6079 is an insulated-gate bipolar transistor (IGBT) device that is designed for use in high-voltage power control applications, such as motor control and inverter power supplies. This device can handle up to 2300V for an isolation voltage, up to 600V drain-source voltage (Vds), and up to 8A peak drain current (Id). It also provides low on-resistance and fast switching times, making it very efficient for these types of applications.The JANTXV1N6079 IGBT is manufactured using a special process that allows for a much higher breakdown voltage than regular BJT transistors. This is due to the fact that the emitter-base junction is insulated from the collector-base junction. This allows for the high breakdown voltage but still maintains the desirable high current switching characteristics.The JANTXV1N6079 IGBT operates in three basic modes: linear mode, non-linear mode, and reverse blocking mode. In linear mode, the device behaves in a manner similar to a BJT, allowing for a voltage-controlled current. In non-linear mode, the IGBT behaves in a switch-like fashion, allowing for a current-controlled voltage. Finally, when in reverse blocking mode, the IGBT will block any current flow between the drain and the source, similar to an isolated diode.One of the most important features of the JANTXV1N6079 is its low on-resistance. This allows for excellent conduction efficiency, reducing the total power dissipation of the device. This is especially important for applications where power loss is a concern, such as in electric vehicle motors.The JANTXV1N6079 is also capable of fast switching times, making it a great choice for switching applications. This is due to the low internal capacitances of the device, which allow it to change state very quickly. This makes it ideal for fast-switching applications such as inverters.This IGBT is also very tolerant of transient current and voltage conditions. This means that it can handle sudden increases in voltage and current without suffering damage, allowing it to be used in applications such as continuous current welding.In summary, the JANTXV1N6079 is a versatile insulated-gate bipolar transistor device that is well suited for use in high voltage power control applications. Its low on-resistance, fast switching times, and tolerance of transient conditions make it an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
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JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
JANTX1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
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