Allicdata Part #: | 1086-19878-ND |
Manufacturer Part#: |
JANTXV1N6332US |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 22V 500MW B-SQ MELF |
More Detail: | Zener Diode 22V 500mW ±5% Surface Mount B, SQ-MELF |
DataSheet: | JANTXV1N6332US Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/533 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Voltage - Zener (Nom) (Vz): | 22V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 20 Ohms |
Current - Reverse Leakage @ Vr: | 50nA @ 17V |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, B |
Supplier Device Package: | B, SQ-MELF |
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The JANTXV1N6332US is a single high-reliability axial-lead hermetically sealed silicon zener diode, which is developed and manufactured by Vishay Intertechnology, Inc.
The device employs passivated junction isolated mounted in a three-terminal, epoxy-sealed axial lead package for general-purpose use in all types of electronic applications. It is designed to operate up to 150 V. This device is characterized by low leakage current and low noise voltage.
Applications
The JANTXV1N6332US is ideal for use in a wide range of applications, including:
- Clamping/protection circuit
- Overvoltage/load voltage control
- Voltage reference/stabilization circuit
- Voltage monitoring/sensing
- Switching regulators.
Working Principle
The JANTXV1N6332US silicon zener diode operates by utilizing the avalanche effect, which is when a large amount of charge carriers flows through a semiconductor junction as a result of a relatively small voltage applied across the device.
When zener diodes are designed, a special doping is applied to the semiconductor material so that the minority carriers become more mobile and facilitate more effective trapping and releasing of the charge carriers even at lower voltages. This makes them ideal for use in clamps, protectors and power sources.
The JANTXV1N6332US is able to withstand voltages up to 150 V and deliver a low noise voltage. It also features a low leakage current with a low forward voltage characteristic. Furthermore, the JANTXV1N6332US is suitable for high operating temperature conditions and mixed-voltage semiconductor applications including switching regulators and voltage reference/stabilization circuits.
Conclusion
In conclusion, the JANTXV1N6332US is a single hermetically sealed axial lead silicon zener diode that is developed and manufactured by Vishay Intertechnology, Inc. This device is designed for general-purpose applications in a wide range of electronic applications such as protection circuits, overvoltage/load voltage control and switching regulators.
The working principle of the diode is based on the avalanche effect, which makes them ideal for use in clamps, protectors and power sources. The JANTXV1N6332US is able to withstand up to 150 V and features a low leakage current with a low forward voltage characteristic.
The specific data is subject to PDF, and the above content is for reference
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