Allicdata Part #: | 1086-19896-ND |
Manufacturer Part#: |
JANTXV1N6336 |
Price: | $ 12.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 33V 500MW DO35 |
More Detail: | Zener Diode 33V 500mW ±5% Through Hole DO-35 |
DataSheet: | JANTXV1N6336 Datasheet/PDF |
Quantity: | 1000 |
107 +: | $ 11.57750 |
Series: | Military, MIL-PRF-19500/533 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 50nA @ 25V |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
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The JANTXV1N6336 is a Single Zener diode specifically designed to protect electronic devices from electrical surges and transients. The device is a single, PN junction diode that is manufactured using bonded silicon and planar technology. The diode serves as an inexpensive and effective way to protect sensitive electronic devices such as servers, routers, and communication systems. The device is also used in many other applications, including electronic systems, circuit protection, and LED lighting.
The JANTXV1N6336 is designed for use in a variety of applications. It is most commonly used as a transient suppressor and EMI filter, as well as in buzzer, timer, and motor control applications. The device has a high surge limitation capability and is capable of handling currents up to 1A. It can also withstand a peak reverse voltage of 6.3V and has a breakdown voltage of 4.7V.
The JANTXV1N6336 is designed for use in low voltage applications. It has an efficient peak forward current of 200mA, and a good reverse leakage current. The device is able to operate at high temperatures, up to 125 degrees Celsius, and has a low thermal resistance, making it suitable for use in high temperature applications. It is also capable of handling transient voltages of up to 8V and has a peak reverse current of 3.5mA.
The working principle of the JANTXV1N6336 is based on the efficiency and reliability of the Zener breakdown mechanism. The device is designed so that a high enough reverse bias voltage will cause the PN junction to break down, creating a current flow in the opposite direction to normal forward bias. This process is known as Zener breakdown. The Zener breakdown not only prevents the electrical surge or transient from overheating the sensitive electronic components, but also is able to limit the current and provide some degree of EMI filtering.
The JANTXV1N6336 is a reliable and economical way to protect sensitive electronic components from electrical surges and transients. The device is specifically designed to withstand high temperatures and handle large currents, making it an ideal choice for circuit protection and surge protection applications. The Zener breakdown mechanism ensures efficient operation and ensures that current is limited, providing EMI filtering and improved protection.
The specific data is subject to PDF, and the above content is for reference
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