JANTXV1N6463 Circuit Protection

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Introduction

JANTXV1N6463 is a high voltage ultra low capacitance Transient Voltage Suppressor (TVS) Diode. It is designed to protect sensitive electronic equipment from voltage transients caused by electrostatic discharge, electrical overstress (EOS), and lightning.

Application Field

These TVS devices are designed for use in electronic equipment used in high-voltage fault and surge protection applications for Ethernet LAN systems, mobile phones, computer systems, industrial controls, communication equipment, automotive electronics, power supplies, and other circuits used in demanding environments.

The JANTXV1N6463 device offers excellent ESD protection up to ±25kV human-body model (HBM). Low-capacitance design makes it suitable for high-speed applications. No external bias is necessary, making it perfect for applications where board space is at a premium and cost considerations are a priority.

Working Principle

A TVS diode is a two-terminal device that acts like a low-impedance shunt to protect circuits from transient overvoltages. It quickly clamps the voltage to a safe operating level as soon as it exceeds the TVS’s breakdown voltage. This helps to protect sensitive components and maintain the system’s normal operation.

The JANTXV1N6463 is constructed from a double-diffused junction technology and utilizes a silicon avalanche diode structure. The low-capacitance design of the device provides for near-zero clamping losses even at very high frequencies, and the low forward-bias voltage (<0.1V) minimizes power dissipation while ensuring reliable performance at high levels of overvoltage.

The device is rated for an operating voltage of 600V (maximum) and for a peak pulse power of 500W (5/1000 μs), and can handle a maximum continuous overvoltage of +50V. It is RoHS compliant and is rated for an operating temperature range of -55°C to +125°C.

Conclusion

JANTXV1N6463 is a reliable and cost-effective TVS diode suitable for high-voltage fault and surge protection applications. It offers excellent ESD protection up to ±25kV HBM, low-capacitance design, no external bias requirement, and low forward-bias voltage. The device is RoHS compliant and is rated for an operating temperature range of -55°C to +125°C.

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