JANTXV1N6470 Circuit Protection |
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Allicdata Part #: | 1086-3006-ND |
Manufacturer Part#: |
JANTXV1N6470 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 6V 11V AXIAL |
More Detail: | N/A |
DataSheet: | JANTXV1N6470 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 11V |
Supplier Device Package: | Axial |
Package / Case: | G, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 775A (8/20µs) |
Series: | Military, MIL-PRF-19500/552 |
Voltage - Breakdown (Min): | 6.5V |
Voltage - Reverse Standoff (Typ): | 6V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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The JANTXV1N6470 is a 30-volt uni-directional voltage suppressor diode. ThisTVS Diode is typically used in automotive applications, such as for electrical interference protection of semiconductor drivers, passengers compartments, infotainment centers, power exchangers and batteries.
The working principle of a TVS diode is, it is placed in circuit as an overvoltage protection device. This diode is designed to tunnel current in the forward bias direction. When there is a sudden rise in voltage above a certain threshold level usually 5-6V, and the diode becomes ‘ON’ to protect circuits from damage. This is extremely handy in controlling transient surge voltage and diverts them to the ground. When the voltage returns to normal, the diode will turn back to the ‘OFF’ state.
The JANTXV1N6470 has a very low leakage current of only 150μA. It has low capacitance and fast response time of 1nsec with very low power dissipation. It also has surge rated power dissipation of 8.43 Watts. This device can absorb transient current up to 6A and peak impulse current of 15A. It is designed for an operating junction temperature between -55°C to 125°C and Max Thermal Resistance Junction to Air of 0.70°C/W.
JANTXV1N6470 can be used in various kinds of applications such as electromagnetic interference (EMI) protection, overvoltage protection for electronic control equipment, automotive infotainment systems, driver protection, power exchangers and batteries. This diode is used as a blocking device between the power supply and the circuit.
In order to understand how JANTXV1N6470 works in the circuit, let us consider an example application of EMI suppression. In circuit designs, EMI noise is generated due to uncontrolled voltage spike. These sudden spikes can cause a lot of damage to the circuit. To protect these devices from such transient noises, JANTXV1N6470 is placed in the circuit. This device is designed to limit the noise to a certain level, while still allowing normal working of the circuit.
To absorb the EMI noise, the diode first has to be turned ‘ON’ by the voltage spike. Once the diode is ‘ON’, it will supply current by tunneling current in the forward bias direction. Depending on the design of the circuit, the diode will absorb most of the noise and limit it to a safe level. This will help to protect the devices and circuits from being damaged or destroyed due to sudden rise in the voltage and current.
The JANTXV1N6470 is a versatile device that can be used for different types of applications, such as EMI suppression, overvoltage protection, driver protection, power exchangers and battery protection. It is designed for an operating junction temperature between -55°C to +125°C and a max thermal Resistance junction to air of 0.70°C/W. This device has low leakage current, low capacitance and fast response time. It is a great device to protect circuits and devices from sudden voltage spikes.
The specific data is subject to PDF, and the above content is for reference
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JANTXV1N6141A | Microsemi Co... | 38.35 $ | 1000 | TVS DIODE 6.9V 13.4V C AX... |
JANTX1N6103A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.2V AXIA... |
JANTX1N6103US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.76V B S... |
JANTX1N6104 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.71V AXI... |
JANTX1N6104A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V AXIA... |
JANTX1N6104AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V B SQ... |
JANTX1N6105 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V AXI... |
JANTX1N6105AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 13.4V B SQ... |
JANTX1N6105US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V B S... |
JANTX1N6106 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 15.23V AXI... |
JANTX1N6106AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 14.5V B SQ... |
JANTX1N6107 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V AXI... |
JANTX1N6107A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V AXIA... |
JANTX1N6107AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V B SQ... |
JANTX1N6107US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V B S... |
JANTX1N6108 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V AXI... |
JANTX1N6108A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V AXIA... |
JANTX1N6108AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V B SQ... |
JANTX1N6108US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V B S... |
JANTX1N6109 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 19.11V AXI... |
JANTX1N6109A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 18.2V AXIA... |
JANTX1N6110 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V AX... |
JANTX1N6110US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V B ... |
JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
JANTX1N6111US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V B ... |
JANTX1N6112 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V AX... |
JANTX1N6112AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 25.1V B S... |
JANTX1N6112US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V B ... |
JANTX1N6113 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 29.09V AX... |
JANTX1N6113A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V AXI... |
JANTX1N6114 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V AX... |
JANTX1N6114US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V B ... |
JANTX1N6115 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V AX... |
JANTX1N6115A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V AXI... |
JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
JANTX1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
JANTX1N6116AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 37.4V B S... |
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