JANTXV1N6641US Allicdata Electronics
Allicdata Part #:

1086-20020-ND

Manufacturer Part#:

JANTXV1N6641US

Price: $ 11.65
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 50V 300MA D-MELF
More Detail: Diode Standard 50V 300mA Surface Mount D-5D
DataSheet: JANTXV1N6641US datasheetJANTXV1N6641US Datasheet/PDF
Quantity: 1000
113 +: $ 10.48510
Stock 1000Can Ship Immediately
$ 11.65
Specifications
Series: Military, MIL-PRF-19500/609
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SQ-MELF, D
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C
Description

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Diodes are a type of semiconductor device which acts as a one-way valve between two terminals, allowing the flow of current in one direction only. Rectifier diodes are designed to pass large amounts of current and are available in both single and multiple configurations.

The JANTXV1N6641US is a single rectifier diode typically used in high current, high power applications such as power supplies and ignition systems. It is a medium power silicon rectifier diode with a maximum ratings of 1000V and 15A.

The JANTXV1N6641US is a three-terminal device, with two current carrying electrodes, the anode and cathode and the third terminal, known as the gate. In normal operation, the anode is more positive than the cathode, causing current to flow from the anode to the cathode. The third terminal, the gate, is capable of controlling the device’s current flow when it is used in conjunction with a voltage source. This is useful for applications where a precise amount of current needs to be controlled.

The JANTXV1N6641US application fields include power supplies, voltage regulators, battery chargers, and motor control circuits. It can also be used as a rectifier in a transformer based AC-DC power supply. It is designed to pass large amounts of current and is capable of operating at temperatures up to 150ºC. It is also reverse-recovery time optimized and features a low forward voltage drop.

The working principle of the JANTXV1N6641US is based on the movement of electrons and holes which form a P-N junction. In the forward-biased condition, when the anode is more positive than the cathode, the depletion region of the junction increases, allowing electrons to flow to the cathode. In the reverse-biased condition, the depletion region is reduced and the current is blocked. The JANTXV1N6641US is capable of withstanding very large diode current due to its ability to withstand thermal stresses diodes are susceptible to.

In summary, the JANTXV1N6641US is a single rectifier diode typically used in high current, high power applications such as power supplies and ignition systems. It is designed to pass large amounts of current and is capable of operating at temperatures up to 150ºC. Its application fields include power supplies, voltage regulators, battery chargers, and motor control circuits. Its working principle is based on the movement of electrons and holes which form a P-N junction, allowing current to flow in one direction only and blocking it in the other.

The specific data is subject to PDF, and the above content is for reference

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