JANTXV1N754A-1 Allicdata Electronics
Allicdata Part #:

1657-1209-ND

Manufacturer Part#:

JANTXV1N754A-1

Price: $ 5.19
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: DIODE ZENER 6.8V 500MW DO35
More Detail: Zener Diode 6.8V 500mW ±5% Through Hole DO-35
DataSheet: JANTXV1N754A-1 datasheetJANTXV1N754A-1 Datasheet/PDF
Quantity: 176
1 +: $ 4.71240
10 +: $ 4.24179
100 +: $ 3.48774
500 +: $ 2.92218
1000 +: $ 2.54512
Stock 176Can Ship Immediately
$ 5.19
Specifications
Series: Military, MIL-PRF-19500/127
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 5 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 4V
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Description

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The JANTXV1N754A-1 is a single Zener diode, featuring a low operating current, an extended temperature range wide process voltage tolerance, full military screening options, and low EMI radiation. The device is typically used for voltage regulation, leakage current protection, transient pulse suppression and general purpose applications.

The JANTXV1N754A-1 designed with a glass package, operating from -65°C to 175°C, has passes regulators, as well as handles peak currents as low as 1mA and Zener voltages ranging from 8.2V to 36V. Its Vz drift over junction temperature is typically less than 10 MV/°C and its maximum leakage is less than 0.01uA. The device includes a unique construction that optimizes impulse handling capability. This is combined with low EMI radiation characteristics, current regulation and power dissipation.

The working principle of the JANTXV1N754A-1 is based on reverse biased diode operation. In a reverse biased diode, the current flows through the diode in the direction opposite to its normal operating direction. When the voltage across the diode is higher than its break down voltage, electrons within the diode are forced beyond their intended boundaries and the Zener Effect occurs. This causes the current to flow in the opposite direction and Zener avalanche takes place, effectively regulating the input voltage to the desired level.

The JANTXV1N754A-1 features low dynamic impedance, low thermal coefficient and its better plasma withstanding characteristics enable it to work well in a variety of electrical and electronic applications such as accelerometer and gyroscope testing, circuit protection, fluid control, security/alarm systems, on-board power supplies, portable power supplies and battery packs, EMI filter modules, differential transducer protection, voltage transients, positive voltage reference and memory storage. The wide range of applications requires different application areas and the JANTXV1N754A-1 is well suited for all of them due to its robust design.

The JANTXV1N754A-1 is also ideally suited for general purpose applications, providing high ESD ratings, excellent transient surge protection, and low EMI radiation. Additionally, it is RoHS compatible to comply with environmental and recycling requirements.

In conclusion, the JANTXV1N754A-1 is a versatile single Zener diode designed to meet the demanding conditions of a variety of industrial, commercial, healthcare and automotive applications. It features a low operating current, an extended temperature range, wide process voltage tolerance, full military screening options, and low EMI radiation. This makes it the ideal choice for any application requiring low leakage current protection and reliable performance.

The specific data is subject to PDF, and the above content is for reference

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