JANTXV1N973B-1 Allicdata Electronics
Allicdata Part #:

1086-15597-ND

Manufacturer Part#:

JANTXV1N973B-1

Price: $ 3.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 33V 500MW DO35
More Detail: Zener Diode 33V 500mW ±5% Through Hole DO-35
DataSheet: JANTXV1N973B-1 datasheetJANTXV1N973B-1 Datasheet/PDF
Quantity: 1000
449 +: $ 2.98892
Stock 1000Can Ship Immediately
$ 3.32
Specifications
Series: Military, MIL-PRF-19500/117
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 58 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 25V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Description

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Diodes - Zener - Single
The JANTXV1N973B-1 is a type of component in the Diodes – Zener – Single semiconductor device family. It is one of the few Zener diodes with an ultra-small lead SOD-323 (SC-70) package, suitable for a range of special applications. The device comprises a single PN junction, which is heavily doped to give a sharp Zener knee voltage close to its rated Zener voltage (Vz). Other key parameters of this component include a very low maximum power dissipation of 250 mW, a maximum reverse current IZT of 200 mA and a maximum reverse voltage of 6.2 V.

The JANTXV1N973B-1 has several important applications. Primarily, this component is used in situations where a precise control of voltage is required. This includes voltage regulation, over-voltage clamping, and ESD protection. It is also used for switching operations at low currents, and for logic operations for amplifying and digitizing circuits. In each of these applications, the JANTXV1N973B-1’s low current, low power dissipation and small package size are beneficial.

When creating circuits using this component, one should first properly calculate the power dissipation of the component and the dynamic current of the circuit, so as to ensure that the component is not damaged. When the component is in operation, the current must not exceed 200 mA, and the power dissipation must not exceed 250 mW. The safe operating area parameter curves must also be taken into account.

This component’s precise control of the voltages it is regulating comes from its working principle. The Zener knee voltage of the component is very close to its rated Zener voltage because of its heavily doped PN junction. As external voltage increases along the Zener region of the junction, the junction’s resistance drops significantly, allowing the junction to draw a current and regulate the voltages more precisely. This process occurs for voltages up to the junction’s breakdown voltage, beyond which this component will begin to act as an avalanche diode.

In summary, the JANTXV1N973B-1 is a type of specialized Zener diode that is used when a precise control of voltage is required. It is suitable for application areas such as voltage regulation, over-voltage clamping, and ESD protection. It is important to take into account the component’s parameters, safe operating area parameter curves and current capabilities when creating circuits with this component. Its working principle is based on the heavily doped PN junction, which has the effect of narrowing down the Zener knee voltage close to its rated voltage, allowing for precise control.

The specific data is subject to PDF, and the above content is for reference

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