Allicdata Part #: | 1086-20729-ND |
Manufacturer Part#: |
JANTXV2N2369AUA |
Price: | $ 34.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 15V |
More Detail: | Bipolar (BJT) Transistor NPN 15V 360mW Surface M... |
DataSheet: | JANTXV2N2369AUA Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 31.11370 |
Series: | Military, MIL-PRF-19500/317 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 450mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 400nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 100mA, 1V |
Power - Max: | 360mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD, No Lead |
Supplier Device Package: | UA |
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Introduction
The JANTXV2N2369AUA is a special class of transistor device known as a bipolar junction transistor (BJT). This device is a single-transistor device and is designed to work with high-power applications. Its application field and working principle are detailed in this article.
Application Field
The JANTXV2N2369AUA is a versatile transistor device with a wide range of applications. It is ideal for high-power applications such as switching regulators, power amplifiers, inverters and DC-DC converters. It can also be used in other power applications such as inverters, motor control, HVAC systems, audio amplifiers and lighting control systems. It is also a good choice for high-frequency operation, such as radio frequency (RF) and broadcast applications.
Working Principle
The JANTXV2N2369AUA is a transistor device that uses the principle of bipolar junction transistor (BJT) technology. It is composed of three leads, namely the collector (C), base (B) and emitter (E). The collector is the positive lead that connects the input current to the device, while the base is the controllable lead that enables the device to determine the on and off states. The emitter is the negative lead connected to ground.
When a voltage is applied to the base lead, a small current, known as the base current, flows through the transistor, resulting in a large current from the collector to the emitter, called the collector current. The collector current is proportional to the base current, with the amount of current that flows through the device depending on the amount of current in the base lead. This property of the transistor allows it to be used as an amplifier, and is utilized in applications such as radio frequency (RF) transmission and reception and other higher power applications.
Conclusion
The JANTXV2N2369AUA is a special class of single-transistor bipolar junction transistor (BJT) device. It is designed to work with high-power applications, such as switching regulators, power amplifiers, inverters and DC-DC converters. It has a wide range of applications and is a good choice for high-frequency operation, such as radio frequency (RF) and broadcast applications. Its working principle is based on the principle of bipolar junction transistor (BJT) technology, with the transistor controlling the amount of current that flows through the device by adjusting the base current.
The specific data is subject to PDF, and the above content is for reference
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