Allicdata Part #: | 1086-20802-ND |
Manufacturer Part#: |
JANTXV2N3419S |
Price: | $ 18.84 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 80V 3A |
More Detail: | Bipolar (BJT) Transistor NPN 80V 3A 1W Through Ho... |
DataSheet: | JANTXV2N3419S Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 17.12490 |
Series: | Military, MIL-PRF-19500/393 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 5µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 1A, 2V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 |
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JANTXV2N3419S is a type of transistor, classified as a single bipolar junction transistor (BJT). It is a widely used switching, amplification, and signal processing device. It is typically used for high-frequency applications such as television signals, radio frequency (RF) and microwave transmissions.
A bipolar junction transistor consists of three layers of semiconductor material, with each layer having different electrical properties. The base layer is the control element and is usually made from semi-insulating material such as silicon. The other two layers, the emitter and collector, are usually made from doped silicon. The emitter is positively charged and the collector is negatively charged. When a small current is applied to the base layer, it controls the amount of current flowing between the emitter and collector layers.
JANTXV2N3419S transistors are available in a variety of packages and configurations. The most commonly used packages are the TO-92, SOT-23, and TO-3. The SOT-23 package is a surface-mounted package and is often used for high-density packaging. The TO-92 package is a through-hole package and is suitable for automated assembly. The TO-3 package has larger leads and can handle higher power.
The application of JANTXV2N3419S transistors is varied. They can be used in a variety of analog signal processing applications, such as amplifying and switching signals. They are also popularly used in digital circuits, where they can be used as logic gates or flip-flops. In radio frequency applications, they can be used to amplify high-frequency signals, such as those from AM/FM radio broadcasts. They also find use in television receivers, as well as radar, satellite and satellite communication systems.
The working principle of JANTXV2N3419S transistors is simple. When a small current is applied to the base layer, it controls the amount of current flowing between the emitter and collector layers. This current flow helps amplify the input signal, allowing it to be used for other purposes. The amount of current flowing between the base and the collector layer is also determined by the resistance of the collector, which depends on its characteristics and configuration. This resistance can be adjusted to suit the requirements of the application.
In summary, JANTXV2N3419S transistors are versatile devices that can be used in a variety of applications, such as amplifying, switching, and signal processing. They have a simple working principle, involving the control of current flow between the base and the collector layers. They are available in several packages and configurations, making them suitable for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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