JANTXV2N3439UA

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JANTXV2N3439UA is a popular bipolar junction transistor (BJT). It specifically belongs to the Single transistors family. In terms of application, it is commonly used in low-power transient and amplifier circuits. It is currently being produced by a wide range of manufacturers, such as VISHAY, IEEE, Texas Instruments and Philips Semiconductors.

Bipolar junction transistors consist of three lead connections, two of which are the Collector (C) and the Emitter (E). The base of the BJT is the third connection, which is used to control the current flowing between the collector and the emitter. When current is applied to the base, it produces a current gain that switches the collector-emitter connection. The two terminals, collector and emitter, are used for the electrical connection of the JANTXV2N3439UA. The device comes in a TO-39 package, meaning it can easily be integrated in several electronic systems.

The JANTXV2N3439UA has a maximum collector power dissipation of 500 mW/oC. Its maximum collector to emitter voltage ranges from 30V to 60V, while its collector current is up to 3.0A. Its collector to base breakdown voltage is rated at 75V, while its emitter to base breakdown voltage is rated at 6V. The device has a typical gain of 10 at its normal operating conditions, with maximum capacitances of 12pF at 1.0GHz and 4pF at 10GHz.

With regards to the working principle of the JANTXV2N3439UA, it utilizes the N type material\'s characteristic as a diode. This diode effect is applied to the flow of electrons across the two terminals, the base and the emitter. When current is applied to the base, electrons flow from the base to the emitter, causing a voltage drop in the base-emitter junction. This voltage drop changes the resistance of the junction, thus changing how much current can flow through it. This is how the JANTXV2N3439UA controls current flow from the collector to the emitter.

In summary, the JANTXV2N3439UA is a single bipolar junction transistor (BJT). This type of transistor works by controlling the current flowing between the collector and emitter, through a voltage drop in the base-emitter junction. Its main application is in low-power transient and amplifier circuits, with a power dissipation of 500 mW/oC, a maximum collector to emitter voltage of 30V to 60V, and a Collector current of up to 3.0A.

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