JANTXV2N3501L Allicdata Electronics
Allicdata Part #:

1086-3078-ND

Manufacturer Part#:

JANTXV2N3501L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 150V 0.3A
More Detail: Bipolar (BJT) Transistor NPN 150V 300mA 1W Throug...
DataSheet: JANTXV2N3501L datasheetJANTXV2N3501L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/366
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Description

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JANTXV2N3501L is a kind of bipolar junction transistor (BJT) with a single resistor. It belongs to the Transistors – Bipolar (BJT) – Single kind. This kind of transistor has advantages and features such as low on-state resistance, fast recovery, and low distortion. Moreover, it has a maximum voltage of 55V and a maximum current of 20A.

The main application field of JANTXV2N3501L is mainly used in power field, such as amplifiers, RF, MP3 players, television, etc. It is also widely used as a switch in a circuit, for example for pump control, LED driving, relay control, and motor control, etc. Besides, it can also be used in other applications like limiters, voltage dividers, analog & digital circuits, and radio frequency filter circuits, etc.

The working principle of the JANTXV2N3501L is based on the typical BJT structure. Its structure consists of two PN junction layers with a common emitter. When a voltage is applied to the base-emitter junction of the transistor, a small current (Ib) flows through it, and the amount of this current is determined by the properties of the transistor. This current will alter the behavior of the collector-emitter junction and the amount of current flowing through this junction will be determined by the magnitude of the base current, Ib. Thus, the current through the transistor can be controlled by varying the base current Ib.

JANTXV2N3501L is also capable of operating in three different modes: common-emitter, common-collector and common-base modes. In the common-emitter configuration, the base to emitter voltage of the transistor functions as an input voltage, and the collector-emitter voltage is used as output voltage. In the common-collector configuration, the base voltage is used as an input voltage and the emitter voltage used as the output voltage. Finally, in common-base configuration, the emitter to base voltage is used as the input voltage and the collector-emitter voltage used as the output voltage.

In summary, JANTXV2N3501L is a kind of bipolar junction transistor with a single resistor that belongs to the Transistors – Bipolar (BJT) – Single kind. It is suitable for a wide range of applications such as pump control, LED driving, relay control, motor control, and other applications like limiters, voltage dividers, analog & digital circuits and radio frequency filter circuits. It has a maximum voltage of 55V and a maximum current of 20A, and its working principle is based on the typical BJT structure, capable of operating in three different mode: common-emitter, common-collector and common-base mode.

The specific data is subject to PDF, and the above content is for reference

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