JANTXV2N3637UB

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JANTXV2N3637UB Application Field and Working Principle

The JANTXV2N3637UB is a part of the Transistors - Bipolar (BJT) - Single family from Microsemi Corporation. It is an NPN high voltage silicon power transistor designed for use in high frequency switching, high speed switching, and high power switching applications. This versatile device features both maximum operating frequency and power output. As such, it has found wide usage in both commercial and military applications.

Device Description

The JANTXV2N3637UB is an NPN epitaxial power transistor housed in a hermetically sealed TO-3 package. It is capable of delivering high transition frequency and power output. The device includes integrated base-emitter and collector-emitter protection diodes. It also features protection against avalanche breakdown, over-temperature and electrostatic discharge.

Device Characteristics

The device offers several key performance characteristics, including:

• High high-frequency operation
• High-speed switching capability
• High power output
• Hermetically-sealed construction
• Integrated protection diodes
• Protected against avalanche breakdown and over-temperature

Typical Applications

The JANTXV2N3637UB is a versatile device and can be utilized in a wide range of high-frequency and high-power applications. It is suitable for use in:

• Switch-mode and linear power supplies
• High-frequency amplifiers
• High-speed switching circuits
• Driver circuits
• DC-DC and AC-DC converters
• Low-voltage inverters
• Lighting and motor control
• Power management
• Switched-mode audio amplifiers

Working Principle

The JANTXV2N3637UB is an NPN epitaxial power transistor. That is, it is a type of junction field-effect transistor (JFET) consisting of three layers of semiconductor material. The three layers consist of a P-type (positive) layer in the center and two N-type (negative) layers on either side. When voltage is applied to the base (gate) of the transistor, current flows between the emitter and collector. This flow is controlled by the base-emitter voltage, which in turn determines the type of operation of the transistor.

In the case of the JANTXV2N3637UB, the device operates in an "NPN" mode, meaning that the base (gate) must be pulled low in order for the current to flow from the emitter to the collector. In other words, the transistor acts like an "on/off" switch, allowing a current to flow when the base voltage is low and blocking current from flowing when the base voltage is high.

The device also features integrated protection diodes between the emitter and collector and between the base and collector. These diodes protect the transistor from electrostatic discharge (ESD) damage. The device is also protected against avalanche breakdown and over-temperature conditions.

Conclusion

The JANTXV2N3637UB is an NPN power transistor from Microsemi Corporation that is suitable for use in a wide range of high-frequency and high-power applications. It has a hermetically-sealed construction and integrated protection diodes that provide protection against electrostatic discharge, over-temperature and avalanche breakdown. The device is capable of delivering high transition frequency and power output, making it an ideal choice for switching, amplifying and other applications.

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