Allicdata Part #: | 1657-1220-ND |
Manufacturer Part#: |
JANTXV2N3716 |
Price: | $ 47.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | DIODE |
More Detail: | Bipolar (BJT) Transistor NPN 80V 10A 5W Through H... |
DataSheet: | JANTXV2N3716 Datasheet/PDF |
Quantity: | 100 |
1 +: | $ 43.37550 |
10 +: | $ 40.82270 |
Series: | Military, MIL-PRF-19500/408 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 2A, 10A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 3A, 2V |
Power - Max: | 5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-3 (TO-204AA) |
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JANTXV2N3716 is a single bipolar junction transistor (BJT). It is widely used in many different applications and has a wide range of operating voltages, making it popular across high frequency, low power and general purpose applications.
Features of JANTXV2N3716
JANTXV2N3716 transistors are available with a power rating of 200mW and a collector-emitter voltage of 25V. They also feature a collector emitter breakdown voltage of 100V and an emitter base breakdown voltage of 6V. This makes JANTXV2N3716 suitable for a wide range of applications, including audio and low power motor control.
Applications and Working Principle
JANTXV2N3716 transistors can be used in various different applications, such as amplifiers, general-purpose switching circuits and relay drivers. They also find use as buffers, current sources, motor drivers and as logic level switches. The working principle of a bipolar junction transistor is based on the flow of charge carriers. When a voltage is applied to the base terminal of the transistor, it causes current to flow from the emitter to the collector. Thus, the collector current is proportional to the current that is flowing through the base terminal.
In analog circuits, the current gain of the transistor acts as a voltage control gain element, enabling the user to control the input current with a small change in the control voltage. In digital circuits, the transistor acts as a switch, allowing the current to flow when the base voltage is above certain threshold and blocking the current when the base voltage is low. Thus, a BJT can be used as a logic gate in switching applications.
Split Collector Transistors
JANTXV2N3716 is also available in split-collector configuration, which allows it to be used in high-frequency applications. Compared to a standard BJT, a split-collector transistor has a higher transconductance (gm) at low collector current. This makes it suitable for amplifier applications that require higher current gain or a higher frequency response. The split-collector configuration also allows the transistor to turn on faster than a standard BJT, making it ideal for applications that require high switching speeds.
Package and Mounting
JANTXV2N3716 transistors are available in a variety of standard packages, including TO-39 and SOT-23. The package is important for ensuring the electrical and thermal performance of the transistor. It also affects the mounting and heat dissipation of the device. Therefore, when selecting a transistor for an application, it is important to choose a package that is suitable for the environment in which the transistor is to be used.
Conclusion
In summary, JANTXV2N3716 is a single bipolar junction transistor (BJT) with a wide range of operating voltages, making it suitable for a variety of applications. It is available in both standard and split-collector configurations, and a wide range of package options are available. Thus, JANTXV2N3716 is a versatile and cost-effective option for low power and general purpose applications.
The specific data is subject to PDF, and the above content is for reference
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JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
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