Allicdata Part #: | 1086-20933-ND |
Manufacturer Part#: |
JANTXV2N3879 |
Price: | $ 35.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 75V 7A TO-66 |
More Detail: | Bipolar (BJT) Transistor NPN 75V 7A 35W Through H... |
DataSheet: | JANTXV2N3879 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 32.21130 |
Series: | Military, MIL-PRF-19500/526 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 7A |
Voltage - Collector Emitter Breakdown (Max): | 75V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 400mA, 4A |
Current - Collector Cutoff (Max): | 25mA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 5V |
Power - Max: | 35W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-213AA, TO-66-2 |
Supplier Device Package: | TO-66 (TO-213AA) |
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JANTXV2N3879 transistors are used in a variety of applications, from high frequency power amplifiers to global positioning systems (GPS). They can also be used as a replacement for JANTXV2N3787 transistors. The JANTXV2N3879 is a single-package bipolar junction transistor (BJT) with a collector current of 5.42A and a maximum continuous power of 25W. It is also capable of operating at frequencies up to 2.8GHz and features a low leakage current.
When it comes to applications, the JANTXV2N3879 is used in many different types of circuits. These include low noise amplifiers, high power amplifiers, power switches, and high speed sampling circuits, among many other uses. It is also used in the manufacture of consumer electronics such as mobile phones, home theater systems, and car audio systems. Additionally, the transistor is suitable for use in a variety of industrial and military applications.
The working principle of the JANTXV2N3879 is based on the typical BJT operation. The device contains a collector, a base, and an emitter. When a current enters the base, a current gain is produced. The current then flows from the collector to the emitter, and the device will provide the necessary current. This process ensures that the device operates at optimal efficiency.
The JANTXV2N3879 is a popular device due to its high speed and power, as well as its low leakage current. Furthermore, its wide operating frequency range makes it suitable for use in a variety of circuit designs. Its high power and reliability make it an ideal choice for many different applications, and its wide availability makes it an economical choice for manufacturers.
In conclusion, the JANTXV2N3879 is a single-package bipolar junction transistor (BJT) with a collector current of 5.42A and a maximum continuous power of 25W. It is suitable for use in many different types of circuits, from high power amplifiers to power switches, and it is capable of operating at frequencies up to 2.8GHz. Additionally, its low leakage current and wide range of applications make it a popular choice for both consumers and manufacturers.
The specific data is subject to PDF, and the above content is for reference
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JANTX1N6110US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V B ... |
JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
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JANTX1N6115A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V AXI... |
JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
JANTX1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
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