Allicdata Part #: | 1086-20939-ND |
Manufacturer Part#: |
JANTXV2N3960 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 12V TO-18 |
More Detail: | Bipolar (BJT) Transistor NPN 12V 400mW Through H... |
DataSheet: | JANTXV2N3960 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/399 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 3mA, 30mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 1V |
Power - Max: | 400mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-18 (TO-206AA) |
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JANTXV2N3960 is a type of transistor, classified as a single bipolar junction transistor (BJT). Bjts are three-terminal semiconductor devices made from either two p-n junction diodes or two NPNs or PNP transistors. They are widely used in a variety of applications due to their small size and versatility. In this article, we will discuss the application fields and working principle of the JANTXV2N3960.
JANTXV2N3960 transistors are best suited for use in applications requiring a low input power. These transistors are ideal for automotive and industrial applications that require high power dissipation, low voltage operation and low thermal impedance. The JANTXV2N3960 transistors have a low collector-emitter saturation voltage of 0.2 volts, a current gain of 30 to 120 and a power dissipation of up to 150 watts.
JANTXV2N3960 transistors are used in various applications such as audio amplifiers, switching power supplies, motor control systems and signal conditioning circuits. When these transistors are used in audio amplifiers, they allow for higher signal fidelity, increased power efficiency and reduced crosstalk. In switching power supplies, they help regulate the supply voltage to precise levels and reduce electromagnetic interference (EMI). In motor control systems, they provide precise current control and enable efficient operation. Finally, they are used in signal conditioning circuits to amplify, filter and convert analog signals into digital signals.
The working principle of a JANTXV2N3960 transistor is fairly simple. It has three terminals, called the emitter, base, and collector. When a small current flows through the base, a much larger current is created in the collector. The current flow is controlled by the base-emitter voltage and is usually between 10 to 30 times the base current. Unlike FETs, which are unipolar devices, BJTs are bi-polar transistors, meaning that they can be operated in both the NPN and PNP modes. In NPN mode, the current flow is from the emitter to the collector, while in PNP mode, it is from the collector to the emitter.
JANTXV2N3960 transistors are highly reliable devices and have high temperature stability. They have a high isolation voltage between the collector and base, allowing them to withstand high voltage transients. In addition, the transistors have a wide range of operating frequencies, making them suitable for use in high-frequency amplifiers and other circuits. These transistors also have low noise levels and low power consumption.
Overall, the JANTXV2N3960 transistor is a versatile device that can be used in a variety of applications. Thanks to its high power dissipation and current gain, it provides excellent performance in a wide range of applications. With its low input power requirement and small size, the JANTXV2N3960 is an ideal choice for automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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