JANTXV2N5154 Allicdata Electronics
Allicdata Part #:

1657-1226-ND

Manufacturer Part#:

JANTXV2N5154

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: DIODE
More Detail: Bipolar (BJT) Transistor NPN 80V 2A 1W Through Ho...
DataSheet: JANTXV2N5154 datasheetJANTXV2N5154 Datasheet/PDF
Quantity: 36
Stock 36Can Ship Immediately
Specifications
Series: Military, MIL-PRF-19500/544
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Description

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The JANTXV2N5154 is a bipolar (BJT) Single transistor device designed for use in a variety of linear, switching, amplifier and digital applications. The device incorporates a high voltage transistor, two diodes, resistors, and a zener diode. The device is available in a through-hole (THT) package and is suitable for use in a wide range of applications.

The JANTXV2N5154 is a high-voltage, high-power bipolar junction transistor (BJT) transistor with a low current gain. The device consists of an epitaxial layer (formed by etching), a base and collector, and an emitter. The emitter and collector are connected to an internal resistor, while the base is connected to a gate. The gate is also connected to a differential input, allowing for voltage control of the transistor.

The device is designed for use in a variety of applications, such as linear, switching, amplifier and digital applications. The device is capable of providing high power switching and control, as well as providing linear amplification, making it a versatile device for a wide range of applications. It is capable of providing current gains ranging from 10 to 60, allowing it to be used in applications such as power switching, class A and AB amplifiers, and high fidelity audio amplifiers.

The device is capable of operating at voltages up to 200V and can provide current gains up to 200. The device also features a high breakdown voltage, making it suitable for use in high voltage applications.

In terms of working principle, the JANTXV2N5154 is a pnp-type bipolar junction transistor. The device is composed of three terminals: emitter, base, and collector. A voltage applied to the base causes a current to flow between the emitter and collector, providing amplification of the input signal. The current gain of the device is determined by the ratio of the base current to the collector-emitter voltage.

The device is a reliable, rugged transistor, capable of holding up to high temperature and humidity exposure, as well as providing a low power consumption. It is well suited for a variety of industrial, automotive, aerospace, and medical applications.

The specific data is subject to PDF, and the above content is for reference

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