Allicdata Part #: | 1657-1229-ND |
Manufacturer Part#: |
JANTXV2N6249 |
Price: | $ 51.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | DIODE |
More Detail: | Bipolar (BJT) Transistor NPN 200V 10A 6W Through ... |
DataSheet: | JANTXV2N6249 Datasheet/PDF |
Quantity: | 63 |
1 +: | $ 46.65780 |
10 +: | $ 43.83290 |
Series: | Military, MIL-PRF-19500/371 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 200V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 1A, 10A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 10A, 3V |
Power - Max: | 6W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3 |
Supplier Device Package: | TO-3 (TO-204AA) |
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The JANTXV2N6249 is a high-power NPN bipolar junction transistor (BJT) from the 2N6249 family, designed for use in a variety of switching, amplifier and general purpose applications. This device features an *etched, silicon epitaxial NPN collector, with an integrated collector-base capacitance and low thermal resistance.
The JANTXV2N6249 is a single PNP, two-layer transistor designed for use in high power applications and offers superior performance in both switching and general-purpose amplification applications. Its maximum collector current rating is 50 amperes, while its maximum frequency of operation is 700 MHz. Its breakdown voltage is 25 volts, and its power dissipation is 5 watts. Its maximum collector-emitter voltage is 40 volts.
The JANTXV2N6249 has a typical forward current gain of 20-40, making it suitable for use in amplifiers, power switching, and many other applications. It is also optimized for use in high-voltage switching circuits and as a active gain device in power amplifiers. The device\'s low collector-base capacitance ensures low power losses and fast switching times. Additionally, the device provides superior thermal performance, which is important for power applications.
The JANTXV2N6249 uses a structure known as the "base-isolated structure" which enables it to operate over a wide temperature range with low base-emitter saturation voltage. This structure has two layers of low-resistance, high-quality silicon surrounding the main active region which helps to reduce thermal and electrical stress. The device is also designed with a frequency-independent output which allows it to operate over a wide range of frequencies with low base-emitter capacitance.
The JANTXV2N6249 has a high collector-base breakdown voltage and an excellent hFE linearity, which make it suitable for use in switching, amplification, and many other applications. The device is also optimized for use in high-voltage, high-power applications such as power amplifiers and power switching. The device also has low base-emitter saturation voltage, which allows it to operate over a wide range of frequencies with low power loss.
The JANTXV2N6249 is a highly reliable, high-performance transistor designed for use in applications ranging from general-purpose amplification to high-power switching. The device\'s high power dissipation and low thermal resistance ensure excellent performance and long lifespan. Its frequency-independent output and optimized temperature operating range make it suitable for use in a variety of switching, amplifier and general purpose applications.
The specific data is subject to PDF, and the above content is for reference
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