JANTXV2N6306

Series:	Military, MIL-PRF-19500/498
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	250V
Vce Saturation (Max) @ Ib, Ic:	5V @ 2A, 8A
Current - Collector Cutoff (Max):	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 3A, 5V
Power - Max:	125W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-204AA, TO-3
Supplier Device Package:	TO-204AA (TO-3)

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The JANTXV2N6306 is a medium-high voltage planar NPN silicon bipolar junction transistor (BJT). It is part of an enumeration of devices that offer a wide range of suitable high-voltage applications and well-suited to common emitter, emitter-follower, complimentary emitter-follower and grounded-base configurations. This particular transistor comes with two separate elements and each element offers its own collection of device parameters that meet a wide range of requirements.The transistor is capable of being operated with a collector voltage in excess of 150 volts and offers a no-load current gain of at least 2000. This enables the JANTXV2N6306 to be suitable for high-voltage power applications, for both industrial and Analog/Digital mixed-signal applications.The JANTXV2N6306 is a low-cost readily available device and sends features a triple-diffused structure with high current-gain and excellent linear characteristics, making it ideal for use in many general purpose amplification applications. Additionally, the device features a low-capacitance internal structure and low-power consumption characteristics, making it suitable for low-current applications.When considering the working principle of the JANTXV2N6306, the bipolar junction transistor (BJT) is a three-terminal active semiconductor device, typically made from different combinations of silicon, germanium, and recently gallium arsenide. Its operation is heavily reliant on the properties of the p-n junctions formed by the two underlying layers within the device.The BJT is based on two principle operation modes: a.) Active Mode and b.) Saturation Mode. The Active Mode is triggered when the junction voltage of the BJT exceeds the base-emitter voltage, thus transitioning the current within the device from the saturation region to active region. The transition from Active Mode to Saturation Mode is triggered when the junction voltage drops below the base-emitter voltage, thus reducing current within the device below the base-emitter saturation current.The JANTXV2N6306 is designed to facilitate low voltage to high voltage amplifier configurations, and as such, operates mostly in the Active Mode in order to achieves high-gain. It features a low-collector bias voltage to reduce power consumption, as well as a low-power consumption structure for use in low-current amplifier applications.Furthermore, the JANTXV2N6306 also offers very stable characteristics, thus enabling devices to be operated in the Active Mode at relatively low temperatures. Additionally, due to the planar structure of the device and the internal low capacitance, the JANTXV2N6306 exhibits low-noise performance making it a suitable choice for many applications.The JANTXV2N6306 series is an ideal choice for a variety of applications that require a medium-high voltage transistors, featuring linear characteristics and low power consumption. It offers high stability and current gain and is suitable for a variety of typical applications ranging from industrial to analog/digital mixed-signal applications. Additionally, it is a low-cost and readily available device, making it a cost-effective and efficient choice for a wide range of applications.

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