Allicdata Part #: | JANTXV2N6788U-ND |
Manufacturer Part#: |
JANTXV2N6788U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 100V 4.5A |
More Detail: | N-Channel 100V 4.5A (Tc) 800mW (Tc) Surface Mount ... |
DataSheet: | JANTXV2N6788U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 18-CLCC |
Supplier Device Package: | 18-ULCC (9.14x7.49) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 800mW (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | Military, MIL-PRF-19500/555 |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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JANTXV2N6788U are designed primarily as switches used in low voltage and low power circuits. These components are suitable for use up to a maximum of 200 volts and 150 watts. They are employed in a wide variety of applications including switching, communication, process control and video technology. They are also suitable for use in power conversion and in power amplifiers.JANTXV2N6788U are manufactured using a single-transistor Field Effect Transistor (FET) structure. The component is constructed from an N-type (negative) semiconductor material with the source and drain regions formed from an N-type source material. The source and drain regions are electrically isolated from the body of the transistor, which is also known as the gate. When a positive voltage is applied to the gate, a narrow channel is formed between the source and drain regions, allowing electrons to flow from the source region to the drain region. This flow of electrons is known as the drain current and is what allows currents to pass through the transistor when a voltage is applied.JANTXV2N6788U can be configured in several different ways to take advantage of their switching and control capability. The most common way to use these transistors is a common-source configuration, where the gate is connected to the source and the drain is connected to the load. By applying a voltage to the gate, the amount of current flowing through the drain can be controlled. The advantage of this configuration is that it provides a simple way to switch electrical signals off and on.Another popular configuration is the common gate circuit, where the gate is connected to the source and the drain is connected to the source. This configuration can be used to control current from the source to the load and provides more flexibility than the common-source configuration. In this configuration, the voltage applied to the gate will determine the amount of current that can flow through the source.Finally, JANTXV2N6788U can be used in a common drain configuration, where the gate is connected to the drain and the source is connected to the load. In this configuration, the gate voltage is used to control the current from the source to the drain. By using this configuration, the current can be switched on and off quickly, allowing for faster switching speeds.JANTXV2N6788U are suitable for use in a number of different applications including switching, communication, process control and video technology. They are also suitable for use in power conversion and in power amplifiers. These components are designed primarily as switches and can handle voltages up to 200 volts and 150 watts. By taking advantage of the different configurations available, they can be used to switch signals quickly and effectively.
The specific data is subject to PDF, and the above content is for reference
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