JANTXV2N6790 Allicdata Electronics
Allicdata Part #:

JANTXV2N6790-ND

Manufacturer Part#:

JANTXV2N6790

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH
More Detail: N-Channel 200V 3.5A (Tc) 800mW (Tc) Through Hole T...
DataSheet: JANTXV2N6790 datasheetJANTXV2N6790 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Tc)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Series: Military, MIL-PRF-19500/555
Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The JANTXV2N6790 is a monolithic single MOSFET device designed for high power applications, specifically in the area of power control circuitry.
The device is offered in both a low and high voltage version, with voltage ratings of 60V and 30V, respectively. It features an integrated high voltage gate driver that is compatible with both high and low side switching, making it ideal for a wide range of different applications. Additionally, the device’s high efficiency, low noise, and low power consumption make it extremely attractive for power control design.

The device’s application field consists primarily of high power switching, rectification, and motor drive applications. It is especially suited for applications that require high efficiency in the face of high voltage and low current switching. The device can also be used in DC-DC convertors, which require rapid switching and excellent thermal resistance characteristics. It can also be used in applications such as voltage regulators and power conditioners, due to its fast switching capabilities and high efficiency.

The JANTXV2N6790’s working principle is based on metal oxide semiconductor field-effect transistors (MOSFETs), which are the basic building blocks of all power electronics. MOSFETs act as switches, controlling the flow of an electric current by varying the voltage applied to their gate terminal. In the case of the JANTXV2N6790, the device is designed to allow for both high and low side switching, and so can be used in both inverting and non-inverting circuit configurations. The device’s high input impedance allows for improved power efficiency, while its fast switching speed makes it ideal for controlling high power loads.

The JANTXV2N6790 device is suitable for a wide range of applications, due to its combination of high switching speed, high efficiency, and low noise operation. In addition, the integrated gate driver makes it easy to switch between high and low side operation, providing flexibility when designing power control circuitry. Finally, the device’s voltage ratings of 60V and 30V make it suitable for a variety of high power applications.

The specific data is subject to PDF, and the above content is for reference

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