
Allicdata Part #: | JANTXV2N6796-ND |
Manufacturer Part#: |
JANTXV2N6796 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 100V 8A |
More Detail: | N-Channel 100V 8A (Tc) 800mW (Ta), 25W (Tc) Throug... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-205AF Metal Can |
Supplier Device Package: | TO-205AF (TO-39) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 800mW (Ta), 25W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 28.51nC @ 10V |
Series: | Military, MIL-PRF-19500/557 |
Rds On (Max) @ Id, Vgs: | 195 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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JANTXV2N6796 is a single junction field effect transistor (FET) widely used in various applications. It is an N-channel depletion mode FET with a maximum drain current of 4 amps and a maximum drain-source voltage of 17 volts. The transistor is optimized for switching applications and can be used with a large range of voltages. It is also capable of handling high power and high frequencies.
The structure of the JANTXV2N6796 is quite simple. It consists of an n-type channel with an n-type gate region, which creates a depletion region when the gate voltage is applied. When a positive voltage is applied to the gate, electronic charge is depleted from the channel and a conducting channel is formed between the source and the drain. When a negative gate voltage is applied, the channel is reversed, creating a depletion mode FET.
The JANTXV2N6796 is optimized for switching and has high speed switching capabilities. Its low capacitance for a depletion mode FET make it suitable for switching at high frequencies. It has a low on-state resistance and low gate charge, making it suitable for low voltage applications. It also has an excellent temperature coefficient and thermal stability, which makes it suitable for high temperature applications.
The JANTXV2N6796 transistor has numerous applications in a variety of industries. It is often used to construct high power switching circuits, as well as high inrush current circuits, such as relays, inverters and electronic loads. It is also suitable for low noise amplifiers and instrumentation circuits. Additionally, it can be used as a power amplifier in RF circuits and as a DC/DC converter in regulated power supplies.
In conclusion, the JANTXV2N6796 is a single junction depletion mode FET optimized for switching circuits. It is suitable for use in a wide range of applications and is capable of operating at high frequencies, high voltages and high temperatures. Its low on-state resistance, low gate charge, excellent temperature coefficient and thermal stability make it optimal for various high power and high inrush current circuits, as well as for low noise amplifier and instrumentation circuits.
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