JANTXV2N6800

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

JANTXV2N6800 is one of the most commonly used Field Effect Transistors (FETs). It is a single N-Channel MOSFET designed for a variety of analog and digital applications. It has a low On-resistance, high current handling capability and high reverse breakdown voltage. It is suitable for high-speed switching, high current switching and low-noise amplifier applications.

The JANTXV2N6800 is a N-Channel MOSFET (metal oxide semiconductor field-effect transistor). This FET has an intrinsic insulated gate that is biased with a voltage source to control the conductivity of its channel. When an electric field is applied to the gate, the conductivity of the channel is either increased or decreased depending upon the voltage applied to the gate. In the case of a JANTXV2N6800, a negative voltage is applied to the gate to reduce the conductivity of the channel.

The JANTXV2N6800 is most commonly used for switching applications. It can be used to switch high-voltage and high-current circuits, making it an ideal choice for power supply designs. It can also be used in low-noise amplifier designs, as its low On-resistance makes it well-suited for amplifying small signal switching applications. The high current handling capability makes it suitable for high-current, high-power applications as well.

The JANTXV2N6800 has a high break-down voltage, making it a great choice for high-voltage applications. This makes it ideal for use in full-bridge rectifiers, boost converters and other power conversion circuits. Its high reverse breakdown voltage also allows it to be used in AC-DC rectifiers, inverters and other circuits that require high-voltage, low-velocity switching.

The JANTXV2N6800 is also well-suited for battery-charging applications and DC-DC converters. Its low On-resistance and high current handling capability allow it to be used in high-current applications, such as battery charging and DC-DC converters. Its low gate-charge and low threshold voltage also make it suitable for high-speed switching, making it an ideal choice for switching applications that require high switching speeds.

The JANTXV2N6800 is a high-performance, low-power switching FET that can be used in a variety of analog and digital applications. Its low On-resistance, high current handling capability and high reverse breakdown voltage make it suitable for power supply designs, low-noise amplifier designs and high-current, high-power applications. It can also be used in battery-charging applications, DC-DC converters and in circuits that require high-voltage, low-velocity switching. In addition to its various applications, the JANTXV2N6800\'s high break-down voltage makes it a great choice for high-voltage applications.

The specific data is subject to PDF, and the above content is for reference