JANTXV2N6802

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JANTXV2N6802 is a N-channel depletion-mode silicon junction field-effect transistor (JFET) optimized for low–frequency, low–noise small–signal applications. This device provides excellent performances in both linear and high–speed switching applications. It features zener-diode protection from transient power supply or source–to–drain voltage excursions, low transconductance and gate–source capacitance.JANTXV2N6802 is constructed of epitaxial Silicon N–Channel junction, which provides a high–purity, low–defect vertical structure for low noise performance, low temperature coefficient and high gain––from 5 kHz to 1 MHz. The drain contact is formed through an alloyed metal ohmic contact to the source contact. This source contact has an additional ohmic contacts to the top of the N–Channel to improve thermal dissipation. In this way, the reverse breakdown voltage and higher current capability at the drain side of the junction are significantly improved.The JANTXV2N6802 has a wide range of applications. It is designed for low–frequency, low–noise small–signal applications such as voltage amplification, class A RF power amplifiers, class B pulses switch, long–life thermistors and numerous other. It is commonly used in audio preamplifier circuits and radio frequency receivers and transmitters.The working principle of JANTXV2N6802 is based on a four-layer device. An N channel is created between the source and the drain contacts. A layer of highly doped P-type material is sandwiched between the source and drain contacts on either side of the N channel and serves as the gate. A current flows through the N channel and is controlled by the presence of a voltage applied to the gate.When the gate voltage increases above the threshold voltage, the drain current increases. This increase in the drain current is caused by the accumulation of electrons in the N-channel, forming an inversion layer. As the inversion layer is built up due to increased gate voltage, the channel resistance decreases, resulting in higher drain current. As the gate voltage is increased further, the channel resistance continues to decrease until the device reaches saturation.As such, this device controls the current flow between the Source and drain terminals by applying a voltage to the gate. When the gate voltage is zero or negative, the device is said to be in the cutoff region. As the gate voltage increases, the drain current increases and the device moves from the cutoff region to the linear region and finally to the saturation region.In short, JANTXV2N6802 is a versatile, low–noise, low–current transistor that can be used for high–gain voltage amplifiers, class A RF power amplifiers, class B pulses switch, long–life thermistors, and numerous other applications. It is designed for low–frequency, low–noise small–signal applications. Its working principle is based on the application of a gate voltage to the gate of a four-layer semiconductor device, which controls the current flow between the source and drain terminals. Its features and performance make it an ideal choice for a wide range of applications.

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