JR28F032M29EWBA

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The JR28F032M29EWBA belongs to the family of non-volatile NAND flash memory type. Specifically, it is a 128Mb CMOS NAND Flash Memory. It is a type of integrated circuit or IC, specifically an EEPROM, wherein the transistors and other electrical components are built in to the chip itself. It is widely used in applications in consumer electronics, automotive and industrial control, medical facilities, and robotics.

The JR28F032M29EWBA offers reliable read, write and erase performance at both low and high temperatures. It also requires minimal power and time to function. It has an operating voltage range of 1.7V to 2.7V and a typical operating current of 25mA. It features a device/sector lock command for enhanced written/erased data protection.

The device comes with a 3-bit binary page addressing mode and holds up to 128Mb of data. It also has a reset/ready and busy/pass bit for improved data access and control. Furthermore, it features an advanced wear-leveling technology, which optimizes the data storage and retrievability. In addition, it has a Data Refresh Cycle to ensure the data is retained and maintained nonvolatilely.

In terms of its working principle, the JR28F032M29EWBA utilizes a series of charge transfer transistors (CTTs) to store, retrieve, and process data. Each CTT holds one and only one bit of information. When a voltage is applied to the transistor, the bit is retained without any form of amplification or conversion. When a bit is read, the transistor moves the data to the output line, where it can be processed by the device.

The JR28F032M29EWBA is capable of storing up to 128Mb of data, making it ideal for many applications, such as car navigation systems, digital cameras, and other consumer electronics devices. It is also widely used in automotive and industrial control, medical facilities, and robotics.

The device also features an integrated write protection feature, which is used to prevent accidental rewriting of data. In addition, the device is capable of working with both NOR and NAND-type memory, making it highly versatile for many applications. Furthermore, it offers the highest read and write speeds available, so that data can be accessed quickly and efficiently.

In summary, the JR28F032M29EWBA is a 128Mb CMOS NAND Flash Memory, ideal for use in many applications in consumer electronics, automotive and industrial control, medical facilities, and robotics. It utilizes a series of charge transfer transistors (CTTs) to store, retrieve, and process data and comes with a 3-bit binary page addressing mode. It also offers write protection, a Data Refresh Cycle, and the highest read and write speeds available.

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