JR28F032M29EWLA

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP

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Width and Structure of JR28F032M29EWLA

JR28F032M29EWLA is a 32 Mbit, 3.0V, uniform sector flash memory which is manufactured by STMicroelectronics. It can support a multiplexed I/O configuration for the address and data bus. The standard width of the assembly is 28-Ball Plastic Chip Carrier Package (VFBGA). It has 384 KB of data storage space and a 64-bit aligned top/bottom sector.

Application Field and Limitation of JR28F032M29EWLA

JR28F032M29EWLA is suitable for various embedded system applications, such as nomadic computing, digital cameras, and multimedia. It has a secure storage feature, which makes it an ideal choice for applications that require high performance, reliability and secure protection of data. For example, it can be used in memory facilities to store sensitive information.

Features and Benefits of JR28F032M29EWLA

JR28F032M29EWLA provides high performance and endurance for multiple address/data cycles, efficient programming and erase operations, unlimited read, write and erase cycles and secure data protection capabilities. Also, its fast access times, high endurance and low power consumption make it a great choice for demanding applications.

Working Principle of JR28F032M29EWLA

The working principle of the JR28F032M29EWLA is based on the operation of the NAND-type flash memory. It consists of a NAND string, whose elements can be selectively erased by exposure to a high electric field. When a cell is selected, the proper voltage is applied to the gate so that a certain amount of charge is stored. By reading the voltage, the logic state (0 or 1) of the cell can be detected.

Conclusion

The JR28F032M29EWLA is a versatile, high performance, low power NAND-type flash memory designed to meet various application needs. It is suitable for various embedded system applications and has excellent secure data protection capabilities. Its fast access times, high endurance and low power consumption make it perfect for a variety of applications. Additionally, it has unlimited read, write and erase cycles, ensuring reliable performance.

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