Allicdata Part #: | JR28F064M29EWTBTR-ND |
Manufacturer Part#: |
JR28F064M29EWTB TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64M PARALLEL 48TSOP |
More Detail: | FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Paral... |
DataSheet: | JR28F064M29EWTB TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (8M x 8, 4M x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | JR28F064 |
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Memory, in the context of electronic systems and devices, is a device that stores and retrieves bits of data. The JR28F064M29EWTB TR, which stands for “Triple-access Read/Write Burst RAM,” is a type of memory device commonly used in many types of electronic and computer applications. In this article, we will discuss the application field and working principles of the JR28F064M29EWTB TR.First, let’s start off by discussing its application field. The JR28F064M29EWTB TR is used in a wide variety of applications, including audio systems, telecommunication systems, and computer applications. In audio systems, it is used as a memory device to store and retrieve sound data. In telecommunication systems, the JR28F064M29EWTB TR is used for monitoring and tracking data. And in computer applications, it is used for caching memory and storing digital information.
Now that we have discussed the application field of the JR28F064M29EWTB TR, let’s move on to discussing its working principles. The JR28F064M29EWTB TR is based on a dynamic RAM (DRAM) technology. DRAM works by storing data in a series of tiny capacitors, which are charged and discharged to represent 0s and 1s. When a capacitor is charged, it represents a 1, and when it is discharged, it represents a 0. The advantages of using the JR28F064M29EWTB TR include its fast speed, a low power consumption, and the ability to store large amounts of data.
The JR28F064M29EWTB TR also has a triple-access system, which is a way of increasing data transfer speeds. Triple access occurs when both a write and a read command is sent to the memory, while a third command is used to access data. With triple access, data can be accessed three times faster, reducing the time it takes for the memory to respond to a request. This is beneficial for applications or systems that require fast data access.
Finally, the JR28F064M29EWTB TR also has a “burst mode” feature, which allows for faster data transfer speeds. The burst mode works by reading or writing multiple words of data in quick succession. This reduces the time required for access, resulting in faster memory performance. Burst mode can be used to access large amounts of data in a short amount of time, making it ideal for high-speed applications.
In conclusion, the JR28F064M29EWTB TR is an advanced memory device commonly used in audio systems, telecommunication systems, and computer applications. Its main benefits are the fast data transfer speeds and a low power consumption. It also offers a triple-access system and a burst mode feature, both of which increase the speed and efficiency of the device. Memory is an essential part of any electronic or computing device, and the JR28F064M29EWTB TR is a great choice for anyone looking for fast, reliable memory performance.
The specific data is subject to PDF, and the above content is for reference
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