JR28F064M29EWLA

Memory - JR28F064M29EWLA Application Field and Working Principle

JR28F064M29EWLA is a high-density, low-voltage, non-volatile memory integrated circuit which is commonly used in system code and data storage, saving and boot application fields. This memory product is a cutting-edge memory device that is perfect for applications that requires low-voltage and high-density data storage. As a type of non-volatile memory, JR28F064M29EWLA is capable to store data. It can maintain its stored data even when the power is gone.

This memory module is available in numerous packages and split into two groups: CAN vs CANND. The CAN package support Hi-Rel application fields and the CANND package offers improved signal/noise. This device operates well in -40~85℃ temperature and it has been qualified for industrial standards like AEC-Q100.

Working Principle of JR28F064M29EWLA

JR28F064M29EWLA is based on a non-volatile memory device called Flash memory. Whilst traditional memory devices, like RAM, stores data on a power-dependent medium, the Flash memory keeps its data storage on an electrically-erasable programmable read-only memory (EEPROM) which is power-independent. This memory device is an implementation of EEPROM technology that is used to store data in an inexpensive, durable format.

The technology of this memory-based device is derived from its structure. Each device consists of a programmable array of individual cells (or "floating gates"), which can be programmed and erased by delivering electrical pulse. Each cell is made up of two gates: source and drain. These gates are insulated from one another, permitting electrons to flow through the device when necessary.

Within the device, the electrical energy is used to switch each row or column of the array by applying a voltage to the corresponding source and drain. When the pulse is applied, electrons move from the source to the drain and remain trapped in the floating gates, thus storing data

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