JR28F064M29EWLB TR

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JR28F064M29EWLB TR is a type of memory, which is a tiny electronic circuit used for storing digital information. In general, memory devices are used to store both programs and data. These memory devices are used in a variety of applications ranging from embedded systems to general computing. In this article, we will discuss the application field and working principle of JR28F064M29EWLB TR.

Application Field

JR28F064M29EWLB TR is a two-dimensional EEPROM (Electrically Erasable Programmable Read-Only Memory) that uses an array of floating gate transistors. This memory device is most commonly used in embedded applications such as automotive, telecom, industrial, and medical. It can store up to 1.3M bit of data or 16-bit words, which is 8 times more than a standard EEPROM. Furthermore, this device can be operated at temperatures ranging from -40°C to +125°C, making it suitable for use in extreme environments.

JR28F064M29EWLB TR is also used in industrial and automotive applications such as engine control unit, air-conditioning and power steering. This device has been designed to be protected against overvoltage, ESD, and other environmental stresses. It also features an on-chip write protection and a self-timed write cycle, which makes it highly reliable for use in critical applications.

Working Principle

JR28F064M29EWLB TR uses one-transistor-one floating gate (1T-1FG) architecture to store data. The memory cell consists of three terminals: source (S), drain (D) and floating gate (FG). When a positive voltage is applied to the FG, electrons are attracted and stored in the FG. This charge stored in the FG can be used to store information thereby making it a memory cell.

The device operates by applying DC voltages to the source, drain and FG. The voltages applied to the source and FG sets the threshold voltage of the transistor, which determines whether the memory cell is programmed or not. To program a memory cell the ΔVgs (voltage difference between the FG and the S) must be above the device\'s threshold voltage (Vth). To erase the memory cell the ΔVgs must be below the device\'s threshold voltage. Once programmed, the stored charge will not be lost unless the chip is exposed to high temperature, electrical shock, and/or powerful radiation.

The memory cells in JR28F064M29EWLB TR can be programmed in blocks using block erase and block write commands and are also highly reliable due to their ECC routine. The ECC routine is used to detect and correct errors in the data by adding check bits in the memory cell and then performing the data ECC. This ensures the data stored in the memory cell is accurate.

Conclusion

JR28F064M29EWLB TR is a sophisticated two-dimensional EEPROM memory device used in embedded and industrial applications. It is highly reliable due to its ECC routine and its ESD, overvoltage and temperature protection. Furthermore, the device has a self-timed write cycle, which improves its performance and makes it suitable for use in critical applications. The device uses a 1T-1FG architecture for storing data and applying DC voltages for programming and erasing operations.

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