JR28F032M29EWHA

JR28F032M29EWHA is a highly reliable electrically erasable and programmable read-only memory (EEPROM) device designed for use in various electronic applications. It has been developed and manufactured with a superior quality standard, enabling designers to use this memory component in a wide range of applications that require an EEPROM with detailed control and ensure the end-product is much more reliable.

The JR28F032M29EWHA is a 32-pin device and is available in two packages: an 8pin SOIC package and 48-pin TQFP package. It features an advanced architecture, capable of storing a large amount of data, up to 32K-bit memory arrays, and able to hold 1024 words of information. It is also equipped with an erase and write cycle time of 1-20ms and 150,000 write cycles in the 32K-bit array, allowing for faster and reliable memory updates without external programming support.

The JR28F032M29EWHA makes use of a Single Supply programming voltage ranging from 2.7V to 6V, while its operating voltage can support DC6V-13V voltage operation. It operates at a temperature range of -55°C to +125°C, giving designers the flexibility to use it in a range of applications that experience high and low temperature differences. The device also supports an ID key feature that allows for differentiating between different devices, and also a fast write or fast read option for speedier operations.

The main purpose of this EEPROM device is to store and retrieve data, as well as settings, from various electronic applications. This could be used in gaming and handheld devices, automotive and industrial systems, medical systems and control configurations. The EEPROM makes use of the storage concept that can store the settings and data even when the power is switched off or disconnected.

The JR28F032M29EWHA EEPROM works on a basic working principle which involves storing data as a series of 1’s and 0’s on a set number of cells inside the device. A single cell found inside the device is in the form of a tiny capacitor, and depending on the charges present in that particular cell, it will determine if it is storing 1 or 0. The EEPROM device needs to be re-written with a suitable programmer to update the stored data in its cells. Erasing can also be done by resetting the data inside the EEPROM cells to its most basic form.

The JR28F032M29EWHA EEPROM is a reliable and efficient solution for storing important data and settings from various electronic applications. Its compatibility with multiple operating voltages and temperatures, as well as providing an ID code feature, makes it one of the most sought-after EEPROM devices in the market. The device also has a high endurance rate, allowing for up to 150,000 write cycles in its 32K-bit array, making it an ideal memory solution for any electronic application that requires an EEPROM with the maximum reliability and control.