| Allicdata Part #: | KSA1010YTU-ND |
| Manufacturer Part#: |
KSA1010YTU |
| Price: | $ 0.67 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 100V 7A TO-220 |
| More Detail: | Bipolar (BJT) Transistor PNP 100V 7A 1.5W Through... |
| DataSheet: | KSA1010YTU Datasheet/PDF |
| Quantity: | 247 |
| 1 +: | $ 0.61110 |
| 10 +: | $ 0.54747 |
| 100 +: | $ 0.42689 |
| 500 +: | $ 0.35267 |
| 1000 +: | $ 0.27843 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 7A |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 600mV @ 500mA, 5A |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 3A, 5V |
| Power - Max: | 1.5W |
| Frequency - Transition: | -- |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Base Part Number: | KSA1010 |
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Transistors have been an integral part of electronic equipment since the 1950s. The KSA1010YTU is a type of Bipolar Junction Transistor (BJT) that is a single-junction device. The KSA1010YTU has several uses in various types of electronics.
The KSA1010YTU is a small signal transistor primarily used in amplifying applications. Its most common use is to amplify radio signals in order to receive and transmit broadcasts. It can also be used as an input device such as a microphone, as well as in digital logic gates to control the flow of power. But it has the capability to be used in place of larger transistors in some instances, meaning it can be used to create circuits with fewer components and smaller design footprints.
When looking at the working principle of the KSA1010YTU, it is composed of a three-layer semiconductor structure. This three-layer structure is made up of two P-type and N-type semiconductor layers on either side of the middle layer, known as the base layer. The two P-type and N-type semiconductor layers are connected to two external terminals; the emitter and collector.
These external terminals are connected to the internal circuits of the transistor, meaning they are able to control the flow of current from the collector to the emitter. To control these currents, a relatively small current, known as the base current, is applied to the base layer. When this base current is applied, it causes an increase in the current flowing through the base-collector junction of the transistor, which in turn causes a high current to flow from collector to emitter.
The KSA1010YTU also has a large current gain. The current gain is expressed as a ratio, also known as the amplification factor, which indicates the difference between the input and output signals. The higher the amplification factor, the greater the gain in the current. This high current gain makes the KSA1010YTU suitable for amplifying low level signals.
Due to the wide range of uses, the KSA1010YTU can be used in many different applications. It can be used in radio and television receivers, as a power amplifier, and in switching applications. It can also be used to control the flow of current in lamps and motors, and in consumer electronics such as game consoles, audio equipment, and computers. Finally, the KSA1010YTU is also used in medical and aerospace applications.
In conclusion, the KSA1010YTU is a type of single-junction Bipolar Junction Transistor (BJT) that is used in amplifying and switching applications. It has a three-layer structure consisting of two P-type and N-type layers, and when a relatively small base current is applied to the base layer, it causes a large current to flow from collector to emitter. The KSA1010YTU also has a high current gain and is used in a variety of applications, from televisions and radios to medical and aerospace applications.
The specific data is subject to PDF, and the above content is for reference
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KSA1010YTU Datasheet/PDF