Allicdata Part #: | KSA1175OTA-ND |
Manufacturer Part#: |
KSA1175OTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 0.15A TO-92S |
More Detail: | Bipolar (BJT) Transistor PNP 50V 150mA 180MHz 250m... |
DataSheet: | KSA1175OTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 1mA, 6V |
Power - Max: | 250mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
Base Part Number: | KSA1175 |
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A KSA1175OTA is a three-terminal, bipolar junction transistor (BJT). It is an enhancement mode type transistor with an operating temperature as high as 200°C, making it suitable for high power applications. The unregulated breakdown voltage range of the KSA1175OTA is from 5 V to 60 V. This makes it suitable for a wide variety of applications, from low voltage supply circuits and small inverter circuits to large inverter circuits and high power switching circuits.
The main feature of the KSA1175OTA is its high current rating, which is up to 5 A for continuous operation at room temperature. This makes it a suitable choice for applications requiring high power and high voltage switching. It is also suitable for low power circuits because of its low activation current. The KSA1175OTA is commonly used in a variety of circuits, including switching circuits, audio amplifiers and switching power supplies.
The KSA1175OTA consists of three terminals, an emitter, base, and collector. It is in enhancement mode, meaning the transistor will not conduct a significant amount of current until there is a bias between its base and emitter. This bias is also known as the modulating voltage, and this voltage will vary depending on the base-emitter voltage bias applied. As the base-emitter voltage increases, the transistor conducts more, allowing more current to flow through the collector, ultimately allowing the device to act as an amplifier.
When paired with an external circuit, the KSA1175OTA can be used as a switch. When the base-emitter voltage is high, the transistor will be in a conducting state, causing current to flow from the collector to the emitter. When voltage is low, the transistor will not be in a conducting state, preventing current from flowing. This switching effect can be used to control the flow of current in a variety of applications.
The KSA1175OTA also has a high breakdown voltage, which is the voltage level below which no current can be conduction. This makes it ideal for high voltage and high power applications, such as switching power supplies. The built-in protection diode also helps to prevent damage to the circuit and can be used as a protection diode when connecting to AC sources.
In summary, the KSA1175OTA is a three-terminal, bipolar junction transistor, designed for high power and high voltage switching applications. It has a high current rating and is suitable for a wide range of applications. The unregulated break down voltage of this device is between 5V and 60V, making it suitable for a variety of circuits. With its built-in protection diode, it makes for a great choice for high voltage and power applications, such as switching power supplies.
The specific data is subject to PDF, and the above content is for reference
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