KSA1175OBU Allicdata Electronics
Allicdata Part #:

KSA1175OBU-ND

Manufacturer Part#:

KSA1175OBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 0.15A TO-92S
More Detail: Bipolar (BJT) Transistor PNP 50V 150mA 180MHz 250m...
DataSheet: KSA1175OBU datasheetKSA1175OBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Power - Max: 250mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Base Part Number: KSA1175
Description

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Transistors - Bipolar (BJT) - Single

The KSA1175OBU is a single bipolar junction transistor (BJT). It is produced by KEMET, a leading manufacturer of semiconductor devices and systems. The KSA1175OBU is a general-purpose transistor, which is well suited for many applications including power amplifiers, switching, and voltage regulators. This device features a maximum collector current of 1.5A and a collector-emitter saturation voltage of 0.25V.

Application Field

The KSA1175OBU is a versatile transistor for a wide array of applications. It can be used as a power amplifier for audio and other high-power signals, as a switching transistor for control operations, as a current regulator for motor control circuits, and in voltage regulation for DC power supplies. Additionally, it is commonly used in automotive applications as a high-performance switch in electronic fuel injection (EFI) systems.

Working Principle

The KSA1175OBU is a junction transistor, which is a three-terminal device composed of two p-type and n-type semiconductor regions. This transistor is part of the NPN topology, which means it contains one p-type and two n-type doped semiconductor regions. The three terminals of the transistor are the base (B), collector (C), and emitter (E). When a small current is applied to the base, a large current can be controlled between the collector and the emitter.

When a voltage is applied to the base terminal of this device, it creates a “forward bias” across the p-n junction of the base and emitter. This forward bias causes a larger current to flow from the emitter to the collector than the base current. The current gain of the device is determined by the relative size of the collector current to the base current, which is typically between 20 and 200. The collector current is limited by the amount of current that the base can supply, as well as the saturation voltage of the transistor. This voltage is determined by the amount of current flowing through the collector.

The KSA1175OBU can also be operated in the reverse bias mode. In this mode, the device acts like a diode, allowing a small reverse current flow from the collector to the base. This is most commonly used to protect the collector in high-current applications.

The KSA1175OBU is a versatile device that is well suited for use in many different designs. Its reliable operation over a wide temperature range, and its low saturation voltage, make it an ideal choice for use in power amplifiers, switching circuits, motor control, and voltage regulation. It is a reliable device that can be depended on to provide reliable performance in a wide array of applications.

The specific data is subject to PDF, and the above content is for reference

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