KSA1174FTA Allicdata Electronics
Allicdata Part #:

KSA1174FTA-ND

Manufacturer Part#:

KSA1174FTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 120V 0.05A TO-92S
More Detail: Bipolar (BJT) Transistor PNP 120V 50mA 100MHz 300m...
DataSheet: KSA1174FTA datasheetKSA1174FTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Base Part Number: KSA1174
Description

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The KSA1174FTA is a low voltage Bipolar Junction Transistor (BJT) which can be used for a variety of applications, including digital design and power management. The KSA1174FTA is a single transistor which has the ability to provide a high current gain in a wide range of operating conditions. In this article, we will discuss the application field and working principle of the KSA1174FTA.

Application Field

The KSA1174FTA can be used in a number of applications, including audio amplifiers, DC power entry modules, power supplies, AC load switches, pulse width modulation (PWM) control circuits, and DC motor control circuits. It can also be used in power transistor circuits which require low voltage operation. The KSA1174FTA has a low input capacitance, making it well suited for applications which require fast switching speeds. Additionally, it has a high breakdown voltage, which makes it suitable for use in high voltage applications.

The KSA1174FTA can also be used in high current circuits, as it can handle up to 1.5 A. Because of its high gain and fast switching speed, the KSA1174FTA can be used in circuits which require high efficiency and low noise operation. Additionally, it can operate at a wide range of frequencies, making it suitable for a variety of applications including RF, digital, and charging applications.

Working Principle

The KSA1174FTA is a low voltage Bipolar Junction Transistor (BJT). As is the case with all BJT transistors, the KSA1174FTA consists of a base, a collector, and an emitter. The base-collector junction acts as a diode, allowing current to flow only when the base-emitter junction is forward biased. This creates a positive feedback circuit, which allows the transistor to amplify the current which is flowing between the collector and emitter.

The current gain of the KSA1174FTA is determined by the doping level of the base-collector junction. The doping level can be adjusted using external resistors, allowing the current gain to be adjusted to meet the needs of the application. The transistor can also be operated in either a linear or saturated mode, depending on whether the base-emitter voltage is greater or less than the collector-emitter voltage.

The KSA1174FTA has a wide range of operating conditions which allow it to be used for a variety of applications. It has low capacitance, allowing it to switch quickly, and it has a high breakdown voltage, making it suitable for high voltage applications. Additionally, it has a high current gain, making it well suited for high current applications. Its low voltage operation makes it ideal for use in power switching circuits and its high switching speed makes it suitable for RF, digital, and charging applications.

Conclusion

In conclusion, the KSA1174FTA is a low voltage Bipolar Junction Transistor (BJT) which can be used for a variety of applications, including audio amplifiers, DC power entry modules, power supplies, AC load switches, pulse width modulation (PWM) control circuits, DC motor control circuits, and high current circuits. It can operate at a wide range of frequencies, making it suitable for RF, digital, and charging applications. Additionally, it features a low capacitance, a high breakdown voltage, and a high current gain, making it well suited for power management and other high-performance applications.

The specific data is subject to PDF, and the above content is for reference

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