KSA1281YBU

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 500mA, 2V
Power - Max:	1W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92-3
Base Part Number:	KSA1281

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Introduction to KSA1281YBU

The KSA1281YBU is a medium power NPN transistor manufactured by KEMET. It is used primarily in amplifier circuits and switching applications, as well as in a variety of other electronic systems. The KSA1281YBU provides high power gain and stable performance. As part of the KEMET family of switching and power transistors, this device is designed to meet the needs of most applications that require a high power standard switch or amplifier transistor.

Application Fields

The KSA1281YBU is suitable for a wide range of applications, including high power amplifier circuits, low-noise analog signal amplifiers, and voltage amplifier circuits. The device is also used in motor and motor-control circuits, as well as in non-inverting amplifier circuits. It can be used in applications where a reliable and robust switch is needed, such as in switching power supplies and remote control systems.In audio systems, the KSA1281YBU is often found in radio frequency power amplifiers, preamplifiers, and audio amplifiers. It is also used in video amplifier circuits and in low-power DC-DC converters. For computer systems, the device can be used in logic circuits, voltage multipliers, and linear-regulators as well.

Working Principle

The working principle for the KSA1281YBU is based on the NPN Bipolar Junction Transistor (BJT). A BJT is composed of three regions: an emitter region, a base region and a collector region. The emitter and the collector are formed by doped semiconductor regions and the base is the undoped region in between them.At the emitter region, electrons are injected into the base region, while at the collector region, holes are injected into the base region. When a small current is applied to the base terminal, it creates current gain and small current changes in the base cause large current changes in both the emitter and collector terminals, resulting in amplification. The ratio of the collector current and the base current is known as the current gain of the transistor and for the KSA1281YBU, this ratio is typically 200.

Conclusion

The KSA1281YBU is a high-power NPN transistor manufactured by KEMET that is suitable for a wide range of applications. It offers a reliable and robust switch solution, and it is used in amplifier and switching circuits. The working principle of the KSA1281YBU is based on the Bipolar Junction Transistor (BJT), which is composed of three regions: an emitter, a base and a collector. The device has a current gain of 200, meaning that small current changes in the base can cause large current changes in both the emitter and collector terminals, resulting in amplification.

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