Allicdata Part #: | KSA1013YTATB-ND |
Manufacturer Part#: |
KSA1013YTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 160V 1A TO-92L |
More Detail: | Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW T... |
DataSheet: | KSA1013YTA Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 200mA, 5V |
Power - Max: | 900mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSA1013 |
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KSA1013YTA Application Field and Working Principle
The KSA1013YTA is a type of single-package bipolar junction transistor (BJT). It is mainly used for switching and amplification of signals which is made of an epitaxial planar type semiconductor. These devices can be used for switching or amplification of signals in consumer electronic devices, digital circuits, linear circuits and low frequency power amplifier applications. The KSA1013YTA is also employed in voltage regulators and other automotive applications.
Bipolar junction transistors are formed when two PN-junctions are formed by a semiconductor material. It has three main components – emitter, base, and collector. Electric current flows between the emitter and collector when the base is given a small current. The transistor operates in two modes – active mode and saturation mode. In the active mode, the base-emitter junction acts as forward biased diode, whereas in the saturation mode it behaves like an open-circuit.
The working principle of the KSA1013YTA is based upon the fact that when a small voltage is applied to the base terminal, a current will start flowing from the emitter region to the collector region. This current can be controlled by changing the base voltage. Thus, the KSA1013YTA employs thermal feedback to regulate the base current which tells the collector current. As the collector current increases, the voltage drop across the collector-emitter junction also increases, and the transistor enters in the active mode.
In order to define the operating point of the device, the device has to be provided with a voltage divider circuit. This voltage divider circuit helps to set the DC bias level at the base terminal and helps in fixing the current gain of the device. The current gain of the device can also be changed by varying the voltage applied to the base terminal. This helps in controlling the amount of collector current.
The KSA1013YTA has a wide bandgap of 6.95V, which helps in decreasing the leakage current of the device. The device also has a low saturation voltage of 0.45V. The wide bandgap and low saturation voltage of the KSA1013YTA make it suitable for applications where low voltage and high power are important. Some of the other features of the device include low noise, high current gain, and excellent thermal shock performance.
The KSA1013YTA is an excellent choice for applications such as switching and amplification of signals. It can be used in various consumer electronic devices, digital circuits, linear circuits and low frequency power amplifier applications. It has better thermal shock performance and the wide bandgap helps in reducing the leakage current of the device. Thus, the KSA1013YTA is an ideal choice for applications where low voltage and high power are important.
The specific data is subject to PDF, and the above content is for reference
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